Etch challenges and evolutions for atomic-order control

Honda, Masashi; Katsunuma, Takayuki

doi:10.1109/nano.2016.7751325

Cited by 2 publications

(3 citation statements)

References 3 publications

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“…However, if the FC film thickness is increased in attempt to improve the SiN selectivity, an excessive FC film is deposited on SiO 2 and the slit opening is blocked by excess deposition where finally it causes an etch-stop to occur. Therefore, a better trade-off between the fine process control of the SiO 2 layer and SiN selectivity can be reached by applying a new Quasi-Atomic Layer Etch (ALE) technology [128]. Figure 15 shows the concept of Quasi-ALE.…”

Section: Self-aligned Contact (Sac) Etching Selectivity Controlmentioning

confidence: 99%

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The Challenges of Advanced CMOS Process from 2D to 3D

Radamson

Zhang

et al. 2017

Applied Sciences

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Abstract:The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

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Section: Self-aligned Contact (Sac) Etching Selectivity Controlmentioning

confidence: 99%

“…Figure 16 Cross-section SEM images of self-aligned contact (SAC) structure after the conventional etch and optimized Quasi-ALE. Reproduced with permission from [128]. Copyright IEEE, 2016.…”

Section: Self-aligned Contact (Sac) Etching Selectivity Controlmentioning

confidence: 99%

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson

Zhang

et al. 2017

Applied Sciences

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“…A quasi-atomic layer etching (ALE) technique has been developed to achieve fine control of the surface reaction during SiO 2 etching using the concept of ALE. 22,23) This process controls the radical flux and ion flux independently, enabling precise control of the FC thickness and the incident ion energy, [24][25][26] and resolves the etch-stop issue. The mechanisms of the reduced etch stop by quasi-ALE were also investigated.…”

Section: Introductionmentioning

confidence: 99%

Benefit of precise control of surface reaction by new patterning technique for small-contact etching with TiN hard mask

Tabata

Tsuji

Katsunuma

et al. 2017

Jpn. J. Appl. Phys.

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We introduce state-of-the art small-contact etching by a new patterning technique using atomic layer etching (ALE) for sub-5 nm technology generation. In small-contact etching, SiO 2 is etched by using a TiN hard mask with the progress of the miniaturization process. However, when applying the conventional method to small-contact etching with a TiN mask, etch stop is caused by excess deposition on the SiO 2 film. From the results of surface analysis by X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy-energy-dispersive X-ray spectroscopy (TEM-EDX), it is considered that the deposition is formed by the reaction of fluorocarbon (FC) plasma and TiN. To solve this problem, we have developed a quasi-ALE technique to improve the ALE process to make it more suitable for SiO 2 etching. By adopting this technique to small-contact etching with a TiN hard mask, etch stop was significantly reduced. Quasi-ALE precisely controls the surface reaction by controlling the radical flux and ion flux independently. Therefore, the reaction of FC plasma and TiN leading to etch stop can be minimized. Quasi-ALE can resolve the etch-stop issue due to the TiN mask used in the conventional method.

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Etch challenges and evolutions for atomic-order control

Cited by 2 publications

References 3 publications

The Challenges of Advanced CMOS Process from 2D to 3D

The Challenges of Advanced CMOS Process from 2D to 3D

Benefit of precise control of surface reaction by new patterning technique for small-contact etching with TiN hard mask

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