Estimation of the Heating of a Semiconductor Target Surface by a Low-Energy Electron Beam

Investigation of structural and optical properties of MAPbBr3monocrystals under fast electron irradiation

“…Moreover, the fast e-beam exposure could initiate the heating of the samples due to the energy dissipation in the materials after absorption of the ionizing radiation. 36 The primary-electron-beam power has direct proportionality to the electron energy, 37 and higher values of electron energy tend to enhance the heating of the materials. 38 In our work, a high energy of 5 MeV and high fluence of 10 15 electrons per cm 2 were used for the e-beam irradiation.…”

Deflected State of Semiconductor Near-Contact Region at Electrodegradation of Metallization Track on Its Surface

“…Decreasing a minimum topological size of joint elements leads to the problem of "thermal overloads" in the layers (Hu et al, 2012;Zhao et al, 2018;Joi et al, 2019). This may result in destruction of contacts and near-contact regions (Zheng et al, 2017;Amrastanov et al, 2018;Tsai, 2018;Kreiml et al, 2019). On a number of occasions technologists try to apply the methods of correcting mechanical stresses by additional oxidizing the reverse side of silicon plates (Lee et al, 2017;Nguyen et al, 2018;Yao et al, 2019).…”