Estimation of strain from piezoelectric effect and domain switching in morphotropic PZT by combined analysis of macroscopic strain measurements and synchrotron X-ray data

Kungl, Hans; Theissmann, Ralf; Knapp, Michael; Baehtz, Carsten; Fueß, H.; Wagner, Susanne; Fett, T.; Hoffmann, Michael J.

doi:10.1016/j.actamat.2006.10.046

Cited by 112 publications

(77 citation statements)

References 26 publications

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“…The lattice distortion of the tetragonal phase, given by ␦t = ͑c / a −1͒ with 3.4% for BMT-PT38, is larger in this system than that of the rhombohedral phase, given by ␦r = ͑9 / 8͒͑d 111 / d −111 −1͒ with 0.45% for BMT-PT36. 27 The different behavior between ␦t and ␦r holds also true in other ferroelectric systems, representatively in PZT. 27 As shown in Figs.…”

Section: Resultsmentioning

confidence: 99%

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Temperature dependence of piezoelectric properties of high-TC Bi(Mg1/2Ti1/2)O3–PbTiO3

Chen¹,

Tan²,

Jo³

et al. 2009

Journal of Applied Physics

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The temperature dependence of both polarization and electric-field induced strain was investigated for (1−x)Bi(Mg1/2Ti1/2)O3–xPbTiO3 (x=0.36, 0.37, and 0.38), with the morphotropic phase boundary located at x=0.37. Remanent polarization (Pr) and maximum polarization (Pmax) of all compositions are enhanced with increasing temperature up to 175 °C, which is rationalized as improved domain switching due to reduced tetragonality (c/a). The hysteresis during unipolar electric cycling tends to decrease with increase in the fraction of tetragonal phase. Temperature dependent x-ray diffraction demonstrates that switched non-180° domains are stable against thermal depoling above 200 °C, which indicates that the currently investigated materials are suitable for high temperature applications. This promising high-TC piezoelectric is further discussed with reference to oxygen octahedron of the tilted R3c and untilted R3m space groups and the tolerance factor (t).

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Section: Resultsmentioning

confidence: 99%

“…27 The different behavior between ␦t and ␦r holds also true in other ferroelectric systems, representatively in PZT. 27 As shown in Figs. 4-6, the coercive field ͑E C ͒ is decreased as the temperature increases, but P max ͑polarization at maximum field͒ and P r ͑remanent polarization͒ were observed to increase with temperature.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of piezoelectric properties of high-TC Bi(Mg1/2Ti1/2)O3–PbTiO3

Chen¹,

Tan²,

Jo³

et al. 2009

Journal of Applied Physics

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“…Such measurements provide a direct assessment of domain wall vibration (reversible) and small irreversible domain wall displacements at weak electric field strengths. Diffraction measurements at such weak fields can reveal the extrinsic contribution of domain wall motion to the property coefficients at conditions comparable to those used in the determination of macroscopic properties including relative permittivity and the piezoelectric coefficients [27,45,51,52]. Direct measurement of domain wall motion at weak field amplitudes can thereby provide further insight into the grain size dependence of 90 domain wall displacements and its relation to the relative permittivity and piezoelectric coefficient of BaTiO 3 .…”

Section: In Situ X-ray Diffraction During Weak Electric Field Applicamentioning

confidence: 99%

“…A preferred domain texture evolves during electric field application as a fraction of the non-180° ferroelectric/ferroelastic domains reorient towards a more preferred direction relative to the applied field [23]. During this domain reorientation, crystallographic and microstructural effects as a result of electric-field-induced lattice strain and domain wall motion can be measured using X-ray and neutron diffraction [24][25][26][27][28][29][30][31]. Domain reorientation, specifically, can be quantified using the intensity interchange between the different orientation variants.…”

Section: Introductionmentioning

confidence: 99%

Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO₃ at Intermediate Grain Sizes

Ghosh

Sakata

Carter

et al. 2013

Adv Funct Materials

177

137

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Copies of full items can be used for personal research or study, educational, or not-forprofit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP url' above for details on accessing the published version and note that access may require a subscription. AbstractThe dielectric and piezoelectric properties of ferroelectric polycrystalline materials have long been known to be strong functions of grain size and extrinsic effects such as domain wall motion. In BaTiO 3 , for example, it has been observed for several decades that the piezoelectric and dielectric properties are maximized at intermediate grain sizes (~1 μm) and different theoretical models have been introduced to describe the physical origin of this effect. Here, using in situ, high-energy X-ray diffraction during application of electric fields, we show that 90° domain wall motion during both strong (above coercive) and weak (below coercive) electric fields is greatest at these intermediate grain sizes, correlating with the enhanced permittivity and

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“…The lattice distortion (c/a -1) for tetragonal PZT is approximately 2%, whereas the corresponding value for rhombohedral PZT is only 0.7%. 36 Both small lattice distortion and high number of permissible polarization directions favor enhanced switching in rhombohedral PZT. Another parameter which distinguishes the two materials is the dielectric anisotropy, which is much lower in the rhombohedral PZT as is reflected by the properties of the dielectric tensor e ik .…”

Section: A Variation Of Field Distributions Due To Crystallographic mentioning

confidence: 99%

Statistical electric field and switching time distributions in PZT 1Nb2Sr ceramics: Crystal- and microstructure effects

Zhukov

Kungl

Genenko

et al. 2014

Journal of Applied Physics

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Dispersive polarization response of ferroelectric PZT ceramics is analyzed assuming the inhomogeneous field mechanism of polarization switching. In terms of this model, the local polarization switching proceeds according to the Kolmogorov-Avrami-Ishibashi scenario with the switching time determined by the local electric field. As a result, the total polarization reversal is dominated by the statistical distribution of the local field magnitudes. Microscopic parameters of this model (the high-field switching time and the activation field) as well as the statistical field and consequent switching time distributions due to disorder at a mesoscopic scale can be directly determined from a set of experiments measuring the time dependence of the total polarization switching, when applying electric fields of different magnitudes. PZT 1Nb2Sr ceramics with Zr/Ti ratios 51.5/48.5, 52.25/47.75, and 60/40 with four different grain sizes each were analyzed following this approach. Pronounced differences of field and switching time distributions were found depending on the Zr/Ti ratios. Varying grain size also affects polarization reversal parameters, but in another way. The field distributions remain almost constant with grain size whereas switching times and activation field tend to decrease with increasing grain size. The quantitative changes of the latter parameters with grain size are very different depending on composition. The origin of the effects on the field and switching time distributions are related to differences in structural and microstructural characteristics of the materials and are discussed with respect to the hysteresis loops observed under bipolar electrical cycling. V C 2014 AIP Publishing LLC. [http://dx

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Estimation of strain from piezoelectric effect and domain switching in morphotropic PZT by combined analysis of macroscopic strain measurements and synchrotron X-ray data

Cited by 112 publications

References 26 publications

Temperature dependence of piezoelectric properties of high-TC Bi(Mg1/2Ti1/2)O3–PbTiO3

Temperature dependence of piezoelectric properties of high-TC Bi(Mg1/2Ti1/2)O3–PbTiO3

Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO₃ at Intermediate Grain Sizes

Statistical electric field and switching time distributions in PZT 1Nb2Sr ceramics: Crystal- and microstructure effects

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Estimation of strain from piezoelectric effect and domain switching in morphotropic PZT by combined analysis of macroscopic strain measurements and synchrotron X-ray data

Cited by 112 publications

References 26 publications

Temperature dependence of piezoelectric properties of high-TC Bi(Mg1/2Ti1/2)O3–PbTiO3

Temperature dependence of piezoelectric properties of high-TC Bi(Mg1/2Ti1/2)O3–PbTiO3

Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO3 at Intermediate Grain Sizes

Statistical electric field and switching time distributions in PZT 1Nb2Sr ceramics: Crystal- and microstructure effects

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Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO₃ at Intermediate Grain Sizes