2008
DOI: 10.1016/j.tsf.2007.06.215
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Estimation of moisture barrier ability of thin SiNx single layer on polymer substrates prepared by Cat-CVD method

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Cited by 14 publications
(6 citation statements)
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“…However, many Ca test configurations do have small accumulation volumes and should achieve steady state in reasonable times. For the WVTR measurements performed with the Ca film deposited directly on the polymer, ,,,,, there is no accumulation volume and there should not be a problem with long lag times. However, these WVTR measurements may still observe the effects of nonlinear Ca film oxidation kinetics.…”
Section: Wvtr Measurements With Water Vapor Accumulationmentioning
confidence: 99%
“…However, many Ca test configurations do have small accumulation volumes and should achieve steady state in reasonable times. For the WVTR measurements performed with the Ca film deposited directly on the polymer, ,,,,, there is no accumulation volume and there should not be a problem with long lag times. However, these WVTR measurements may still observe the effects of nonlinear Ca film oxidation kinetics.…”
Section: Wvtr Measurements With Water Vapor Accumulationmentioning
confidence: 99%
“…Many temperatures and relative humidities have been employed such as 20 C/60% RH; 30,31 25 C/50% RH; 13 25 C/40% RH; 33,34 38 C/85% RH; 12 38 C/90% RH; 4 39 C/95% RH; 6 40 C/ 90% RH; 35 45 C/85% RH; 32 60 C/85% RH; 12 85 C/50% RH; 5 and 85 C/85% RH. 32 This summary indicates that there are no standard conditions employed to measure WVTR values using the Ca test.…”
Section: A Wvtr Measurements Using the Ca Testmentioning
confidence: 99%
“…26,37 Depositing the Al 2 O 3 ALD film directly on the Ca film also is similar to experiments where the Ca film is deposited on a polymer substrate and the barrier is deposited on the other side. 6,[33][34][35] In this case, the Ca degradation can identify the location of the defect in the barrier on the other side of the polymer. Other studies have also recently been developed to view individual defects in Al 2 O 3 ALD films using copper electroplating or fluorescent tagging.…”
Section: B Nature Of Pinhole Defects Observed By Ca Testmentioning
confidence: 99%
“…Many applications are possible for SiN x . This material has been demonstrated as encapsulation barrier against H 2 O and O 2 (even on top of sensitive organic layers) [33], as passivating dielectric in AlGaN/GaN high mobility field effect transistors [34], as a mechanically strong material for microelectromechanical structures (MEMS) [35], as the gate dielectric in thin film transistors (TFTs) [15], and as a passivating antireflective layer on polycrystalline solar cells [13,42]. This section shows the recent progress on the application of SiN x :H and a-Si:H deposited at high Hot-Wire deposition rates for deposited thin film transistors (TFTs).…”
Section: High Deposition Rate Silicon Nitridementioning
confidence: 99%