Estimation of liquid phase diffusion coefficients of gallium and antimony in germanium from segregation data in crystal growth experiments

Effective convection coefficient for porous interface and solute segregation

“…We could not agree more with Garandet's proposal of setting up a dedicated experimental program to measure diffusion coefficients for Si and Ge [23]. Only when diffusion coefficients are known, the models will be fully tested.…”

“…Using Garandet's k 0 ¼0.071 would have given a perfect agreement, D Ga E2.8 Â 10 À 5 cm 2 /s. For antimony, we adopted k 0 ¼ 0.0025, and got a nearly perfect agreement with: D Sb ¼2.5 Â 10 À 5 cm 2 /s and k 0 ¼ 0.00235 [23]. For comparison, Burton, Prim and Slichter used n Ge ¼ 0:0025 cm 2 =s and reported D Ga ¼ 7.5 Â 10 À 5 cm 2 /s and D Sb ¼5.5 Â 10 À 4 cm 2 /s.…”

“…The published diffusion coefficients for Ga in germanium are significantly higher: 2.1 Â 10 -4 cm 2 /s [34]; 1.7 Â 10 À 4 cm 2 /s [35], 1.5 Â 10 À 4 cm 2 /s [36] and 8 Â 10 À 5 cm 2 /s [37]. The only exception is Garandet's self-consistent solidification model [23], which gave D Ga ¼2.8 Â 10 À 5 cm 2 /s and k 0 ¼0.071. Note that we kept the conventional k 0 ¼0.087, because there is no data points below k 0 ¼0.087, even for turbulent flow.…”

3D Simulation for Melt Laser Anneal Integration in FinFET’s Contact

“…solid (s) phase (i.e., melting) is much lower than the unity, this dopant diffuses into the l phase at the l/s interface. Indeed, Ga has a very small equilibrium segregation coefficient (k0) in both Si (0.008 [5]) and Ge (0.071 to 0.078 [6], [7]). In the same context, antimony (Sb) can be a candidate for n-type contact because its reported equilibrium segregation coefficient is also very small in Si (0.023 [8]).…”

Multilayered highly-active dopant distribution by UV nanosecond melt laser annealing in Ga and B co-implanted high Ge content SiGe:B epilayers

“…melting) is much lower than the unity, this dopant diffuses into the l-phase at the l/s interface. Indeed, Ga has a very small equilibrium segregation coefficient in both Si (0.008) 8) and Ge (0.071-0.078) 9,10) compared to B (0.8 in Si 11) and 2.2-17.4 in Ge 12,13) ), which is supposed to help their strong segregation towards the semiconductor surface during MLA-induced non-equilibrium solidification. In Refs.…”