Estimation of diffusion lengths of acid and quencher in chemically amplified resist on the basis of extreme ultraviolet exposure results

Tanaka, Yuusuke; Kikuchi, Yukiko; Goo, Doohoon; Oizumi, Hiroaki; Nishiyama, Iwao

doi:10.1116/1.2787867

Cited by 6 publications

(3 citation statements)

References 13 publications

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“…7) In the material design of chemically amplified resists, the diffusion of quenchers is an important issue as well as that of acids. [14][15][16][17][18][19] Quencher diffusion was first implemented in a lithography process simulation by Fukuda et al 17) However, the effects of quencher diffusion have not been fully investigated, in particular, compared with the effects of acid diffusion.…”

Section: Introductionmentioning

confidence: 99%

Relationships between quencher diffusion constant and exposure dose dependences of line width, line edge roughness, and stochastic defect generation in extreme ultraviolet lithography

Kozawa

2014

Jpn. J. Appl. Phys.

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Control of the acid catalytic chain reaction is essential in the pattern formation of chemically amplified resists used for the high-volume production of semiconductor devices. In this study, the relationships between the quencher diffusion constant and the exposure dose dependences of the line width, line edge roughness (LER), and stochastic defect generation were investigated assuming extreme ultraviolet (EUV) lithography. The dependence of the latent images of line-and-space patterns with 16 nm half-pitch on the quencher diffusion constant was calculated on the basis of sensitization and reaction mechanisms of chemically amplified EUV resists. The exposure latitude of the line width increased with the quencher diffusion constant. The dependences of LER and stochastic defect (bridges and pinching) generation on the deviation of the exposure dose became weak by increasing the quencher diffusion constant, similarly to the case for the dependence of the line width.

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Section: Introductionmentioning

confidence: 99%

Relationships between quencher diffusion constant and exposure dose dependences of line width, line edge roughness, and stochastic defect generation in extreme ultraviolet lithography

Kozawa

2014

Jpn. J. Appl. Phys.

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“…1 In these experiments, scanning electron microscope (SEM) metrology of the photo mask showed no corner rounding bias, modeled aerial images assuming a thick mask (multilayer + absorber) revealed no corner rounding bias, and resist blur models including PROLITH, 2 single blur 3 and dual blur 4 could not reproduce the observed bias. Today, the source of the corner rounding bias remains unknown.…”

Section: Introductionmentioning

confidence: 98%

Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time

Anderson

Daggett²,

Naulleau

2010

SPIE Proceedings

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In this paper, the corner rounding bias of a commercially available extreme ultraviolet photoresist is monitored as molecular weight, photoacid generator (PAG) size, and development time are varied. These experiments show that PAG size influences corner biasing while molecular weight and development time do not. Large PAGs are shown to exhibit less corner biasing, and in some cases, lower corner rounding, than small PAGs. In addition, heavier resist polymers are shown to exhibit less corner rounding than lighter ones.

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“…. [17][18][19][20][21][22] Monitoring the by-products of reactions that occur in the photoresist can provide a new platform to study both acid yields from PAG's as well as acid-catalyzed deprotection mechanisms in the photoresist within the same experimental configuration. By focusing on the signatures produced by specific masses released from the photoresist during and following EUV exposure, important chemistries occurring in the photoresist can be inferred.…”

Section: Introductionmentioning

confidence: 99%

Mass spectrometer characterization of reactions in photoresists exposed to extreme ultraviolet radiation

et al. 2011

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The development of resists that meet the requirements for resolution, line edge roughness and sensitivity remains one of the challenges for extreme ultraviolet (EUV) lithography. Two important processes that contribute to the lithographic performance of EUV resists involve the efficient decomposition of a photoacid generator (PAG) to yield a catalytic acid and the subsequent deprotection of the polymer in the resist film. We investigate these processes by monitoring the trends produced by specific masses outgassing from resists following EUV exposure and present our initial results. The resists tested are based on ESCAP polymer and either bis(4-tert-butylphenyl)iodonium perfluoro-1-butanesulfonate or bis(4-tert-butylphenyl)iodonium triflate. The components originating from the PAG were monitored at various EUV exposure doses while the deprotection of the polymer was monitored by baking the resist in vacuum and detecting the cleaved by-product from the polymer with an Extrel quadruple mass spectrometer.

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Estimation of diffusion lengths of acid and quencher in chemically amplified resist on the basis of extreme ultraviolet exposure results

Abstract: Polymer structure effect on dissolution characteristics and acid diffusion in chemically amplified deep ultraviolet resists J.

Cited by 6 publications

References 13 publications

Relationships between quencher diffusion constant and exposure dose dependences of line width, line edge roughness, and stochastic defect generation in extreme ultraviolet lithography

Relationships between quencher diffusion constant and exposure dose dependences of line width, line edge roughness, and stochastic defect generation in extreme ultraviolet lithography

Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time

Mass spectrometer characterization of reactions in photoresists exposed to extreme ultraviolet radiation

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