Estimation of defect generation probability in thin Si surface damaged layer during plasma processing

Eriguchi, Koji; Ohno, Akira; Hamada, Daisuke; Kamei, Motohiro; Ono, Ken

doi:10.1016/j.tsf.2007.11.035

Cited by 12 publications

(26 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…18,19) Equation (A04) is only valid when the probe beam is weak enough for the approximation to hold. Then A 2 expðV s =k B TÞ can be calculated by considering the P pump dependence of C, from which the change in V s induced by plasma exposure (ÁV s ) can be extracted.…”

Section: Discussionmentioning

confidence: 99%

“…If we fit the spectrum obtained experimentally to Eq. [18][19][20] This is caused by the prevention of the diffusion or drift of photogenerated carriers, due to recombination centers and/or changes in the surface potential. Of these, E g can be used as a measure of strain.…”

Section: Overview Of Prsmentioning

confidence: 99%

“…5,6) For this reason, it has become crucial to accurately measure PPD as the wafers are being processed (in situ) in the production line. [12][13][14] Since the first attempts in 1997, 15,16) a number of reports have focused on the usage of PRS to characterize the surfaces of semiconductor wafers bombarded with ions, [17][18][19][20] but PRS has not yet achieved wide use. 7) Photoreflectance spectroscopy (PRS) is one of such optical techniques, which has been used to understand the fundamental characteristics of semiconductor materials, [8][9][10] and to measure gate oxide charging damage 11) as well as strain/stress on the wafer.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate

Matsuda

Nakakubo

Takao

et al. 2014

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

An advanced method of photoreflectance spectroscopy (PRS) is studied to enable the microscale optical characterization of Si substrates, physically damaged by energetic ions from plasma during etching. The method examined in this study (µ-PRS) features a microscope module that focuses a probe beam into a 15-µm-wide "microspot" on the wafer surface. Silicon wafers were exposed to argon plasma and then measured by µ-PRS. The obtained spectra were analyzed, and the damaged wafers were quantitatively characterized in terms of the change in their surface potential. In this study, we demonstrate the µ-PRS's capability for the microscopic characterization of plasma-damaged wafers.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Overview Of Prsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate

Matsuda

Nakakubo

Takao

et al. 2014

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The processing time of 30 s was chosen as a saturation value in terms of the damaged-layer formation process according to the previous results. 46,47 Table I shows process conditions employed in this study. RF biasing at 13.56 MHz was applied to the wafer stage 120 mm in diameter with powers ranging from 50 to 200 W in the ICP or with a power of 10 W in the CCP, respectively.…”

Section: Methodsmentioning

confidence: 99%

Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate

Nakakubo

Eriguchi

Ono

2015

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

Characterization of plasma-induced Si substrate damage is demonstrated using an electrical capacitance-voltage (C-V) technique customized for the nano-scale analysis. Low resistive Si wafers are exposed to an inductively coupled plasma (ICP) or a capacitively coupled plasma (CCP). We focus on the effects of plasma parameters and wet-etching processes on plasma-induced physical damage (PPD) analyses. The optical thicknesses of surface and interfacial layers (d SL and d IL ) were characterized using spectroscopic ellipsometry (SE) and compared with the electrical oxide thicknesses (EOT) obtained by the C-V technique. In the case of asdamaged samples, the optical thickness d SL by SE is found to be smaller than the EOT by the C-V technique, while the sum of d SL and d IL was approximately equal to the EOT. A diluted hydrofluoric acid (DHF) wet-etch step is employed to address depth profile of defect density in damaged samples. We identify the latent defect density, d SL , and d IL after the DHF wet-etch, which are indispensible for practical device performance designs. It is found that, although the average energy of incident ions (Ē ion ) is larger for the case of CCP, the latent defect density of CCP-damaged samples is smaller than that of ICP even after the wet-etching. This finding is in sharp contrast to previous pictures-the largerĒ ion leads to the thicker damaged layer and the larger latent defect density. We propose a model for these conflicting results, where the profiles of defect density and the sensitivities of each analysis technique are taken into account. The present work highlights the importance of the nano-scale damage characterization using the C-V technique, allowing to understand the influence of latent defects and to enable better design of future electronic devices. Plasma processing plays an important role in manufacturing present-day microelectronics. Over the last two decades, plasma process-induced damage (PID) has been one of the crucial problems in fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) 1-3 in LSI (Large Scale Integration) circuits. PID consists of four major mechanisms.2 The first mechanism is damage induced by conduction current from plasma flowing into MOSFETs, resulting in degradation of the performance and increase in the parameter variability owing to plasma-induced electrical stress. 1,4,5 This electrical interaction has been discussed and is called plasma-induced charging damage.2 The second mechanism is damage induced by incident photons on material surface. Photons with high energy can interact with materials such as photoresist masks and low-k dielectrics, leading to bond breaking in the materials exposed to plasma, or in some cases, create an interface state between SiO 2 and Si substrate.6-8 The third mechanism is surface and bulk chemical reaction with fast diffusion reactions causing material modification such as surface defects and roughness. The fourth mechanism is damage induced by high-energy ion bombardment on Si substrates or oth...

show abstract

“…Figure 13 shows the estimated local defect site density from photoreflectance spectra of the test structures damaged by the ICP system (closed squares, on the left axis). By using a modified PRS model for estimation of the density of defect sites (Eriguchi et al, 2008b;, one can determines the areal defect site density (N dam ) as a function of E ion . From this figure, one can observe N dam of the order of 10 12 cm -2 for the present plasma conditions.…”

Section: Density Of Defect Sitesmentioning

confidence: 99%

Estimation of defect generation probability in thin Si surface damaged layer during plasma processing

Cited by 12 publications

References 25 publications

Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate

Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate

Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate

Application of Molecular Dynamics Simulations to Plasma Etch Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors

Contact Info

Product

Resources

About