Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO2 thin films

Serin, N.; Yıldız, Abdullah; Alsaç, Aysun Arslan; Seri̇n, Tülay

doi:10.1016/j.tsf.2010.11.027

Cited by 35 publications

(19 citation statements)

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“…The obtained value of E 3 varied from 3.82 to 8.29 meV, which is much less than the activation energies of donor levels in SnO 2 . However, the values of E 3 is in good accordance with the reported values activation energies of NNH conduction [4,10,30]. We calculated the mean free path, l, in our samples using free-electron model l=(hρ/2e 2 )(3/πn 2 ) 1/3 [31].…”

Section: Resultssupporting

confidence: 86%

“…At a certain temperature, the average hopping distance and energy increase with an increase in the O pp , which can also be inferred from the changes in the characteristic temperature T M and T ES . Similar relationship between the resistivity and hopping parameters (DOS at Fermi level, average hopping distances and energies) has also been observed by Serin et al [30,48]. The hopping energy in Eq.…”

Section: Resultssupporting

confidence: 80%

“…Similar relationship between the resistivity and hopping parameters (DOS at Fermi level, average hopping distances and energies) has also been observed by Serin et al . .…”

Section: Resultsmentioning

confidence: 99%

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Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Zhang

et al. 2013

Physica Status Solidi (b)

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The structures, optical and electrical transport properties of SnO2 films, fabricated by rf sputtering method at different oxygen partial pressures, were systematically investigated. It has been found that preferred growth orientation of SnO2 film is strongly related to the oxygen partial pressure during deposition, which provides an effective way to tune the surface texture of SnO2 film. All films reveal relatively high transparency in the visible range, and both the transmittance and optical band gap increase with increasing oxygen partial pressure. The temperature dependence of resisitivities was measured from 380 K down to liquid helium temperatures. At temperature above K, besides the nearest‐neighbor‐hopping process, thermal activation processes related to two donor levels ( and 100 meV below the conduction band minimum) of oxygen vacancies are responsible for the charge transport properties. Below K, Mott variable‐range hopping conduction process governs the charge transport properties at higher temperatures, while Efros–Shklovskii (ES) variable‐range‐hopping conduction process dominates the transport properties at lower temperatures. Distinct crossover from Mott type to ES type variable‐range‐hopping conduction process at several to a few tens kelvin are observed for all SnO2 films.

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Section: Resultssupporting

confidence: 86%

Section: Resultssupporting

confidence: 80%

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Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Zhang

et al. 2013

Physica Status Solidi (b)

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“…However, it is possible to observe metallic impurity band conduction in SnO 2 at even room temperature. 2,11 Also, the strength of 3D EEI can be characterized by the ratio (r s ¼ ½ð3=4Þpna 3 B 1=3 ), where a B is the effective Bohr radius. For r s > 1 for the case in our films (see Table II), the effects of the EEI are expected to be important.…”

Section: Resultsmentioning

confidence: 99%

“…INTRODUCTION Recently, there have been several attempts to understand the outstanding electrical transport properties of metal oxide films. [1][2][3][4][5][6] Since the numerous models explaining transport behavior exist, the analysis of electrical transport properties of these materials is always difficult and controversial. Tin oxide (SnO 2 ) is an interesting and an attractive metal oxide.…”

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confidence: 99%

Improved conductivity of Sb-doped SnO2 thin films

Alsaç

Yıldız

Seri̇n

et al. 2013

Journal of Applied Physics

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Sb-doped SnO2 thin films at different thickness have been grown by sol-gel dip-coating method. All of the films exhibit degenerate semiconductor behavior and high free carrier concentrations. In the films, electrical transport can be explained reasonably well by assuming the electron-electron interactions (EEIs) contribution to the measured electrical conductivity. Our experimental observations are consistent with the theoretical description of the EEI. The effect of films thickness on the EEI contribution is also discussed. When the thickness of film reaches to 1550 nm, the agreement between the EEI theory and experimental data becomes unsatisfactory.

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The variation of electrical transport properties with thickness for ultrathin indium oxide films

Jiang

Yang

Zhang

et al. 2017

Physica Status Solidi (b)

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We have systematically investigated the electrical transport properties of a series of In2O3 films (with thickness t ranging from ∼4 to ∼45 nm) grown on yttrium stabilized ZrO2 single crystal substrates. Those tthinmathspace≳thinmathspace11.5nm films reveal metallic characteristics in electrical transport properties, and electron–electron interaction effects govern the low temperature behaviors of the resistivity. For the 6.3 and 3.7 nm thick films, the resistivities variation with temperature [ρfalse(Tfalse)] curves show insulator behaviors in the whole measured temperature range (2–300K). In addition, the two‐dimensional (2D) Mott type variable‐range‐hopping (VRH) dominates the temperature behavior of resistivity in the temperature range Tcross≲thinmathspaceTthinmathspace≲thinmathspace80thinmathspacenormalK, and a crossover to the 2D Efros–Shklovskii (ES) VRH occurs below Tcross. Our results are quantitatively consistent with the theoretical predications of the 2D Mott‐VRH and 2D ES‐VRH theories in the corresponding temperature regions.

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Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO2 thin films

Cited by 35 publications

References 19 publications

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Improved conductivity of Sb-doped SnO2 thin films

The variation of electrical transport properties with thickness for ultrathin indium oxide films

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Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO2 thin films

Cited by 35 publications

References 19 publications

Structures, optical properties, and electrical transport processes of SnO2 films with oxygen deficiencies

Structures, optical properties, and electrical transport processes of SnO2 films with oxygen deficiencies

Improved conductivity of Sb-doped SnO2 thin films

The variation of electrical transport properties with thickness for ultrathin indium oxide films

Contact Info

Product

Resources

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Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies