Estimated approach development and experimental validation of residual stress-induced warpage under the SiNx PECVD coating process

Lee, Chang‐Chun; Liou, Yan-Yu; Chang, Che-Pei; Huang, Pei‐Chen; Huang, Chien-Kang; Chen, Kuan-Chou; Lin, Yen‐Ting

doi:10.1016/j.surfcoat.2022.128225

Cited by 5 publications

(1 citation statement)

References 24 publications

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“…While there are various methods to measure the film stress like XRD [15][16][17][18][19], PL Raman, wafer curvature technique [20], MEMS test structure [21,22], passive strain sensors [23], we observed that all of the methods are not equivalent. XRD measures the microstress in a grain of poly-crystalline material.…”

Section: Strain Gauge Design For Thin Film Stress Measurementmentioning

confidence: 85%

Residual stress tuning in UV- LIGA fabricated microstructures using deposition temperature and reverse pulse plating

Agrawal¹,

Mitra²

2023

J. Micromech. Microeng.

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This paper utilizes pulse reverse plating to control the residual stress in electroplated Copper MEMS structures. The residual stress plays a significant role in many MEMS devices and control (not just minimization) over it is desirable. We have tuned the stress either compressive or tensile for different plating parameters, without utilizing any additives in the bath or annealing in the process. We demonstrate the use of this technique using a UV-LIGA fabricated microstrain gauge, that is also utilized to measure the stress. We show that the stress can be tuned from a value of 364 MPa to -194 MPa by varying the pulse plating parameters like ratio of forward/reverse time and temperature.

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Section: Strain Gauge Design For Thin Film Stress Measurementmentioning

confidence: 85%

Residual stress tuning in UV- LIGA fabricated microstructures using deposition temperature and reverse pulse plating

Agrawal¹,

Mitra²

2023

J. Micromech. Microeng.

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A review on warpage measurement metrologies for advanced electronic packaging

Sun,

Zhang

2024

Microelectronics Reliability

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PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band

liu

Song

et al. 2023

Opt. Express

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We report the demonstration of a germanium waveguide p-i-n photodetector (PD) for the C + L band light detection. Tensile strain is transferred into the germanium layer using a SiN stressor on top surface of the germanium. The simulation and experimental results show that the trenches must be formed around the device, so that the strain can be transferred effectively. The device exhibits an almost flat responsivity with respect to the wavelength range from 1510 nm to 1630 nm, and high responsivity of over 1.1 A/W is achieved at 1625 nm. The frequency response measurement reveals that a high 3 dB bandwidth (f3dB) of over 50 GHz can be obtained. The realization of the photonic-integrated circuits (PIC)-integrable waveguide Ge PDs paves the way for future telecom applications in the C + L band.

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Estimated approach development and experimental validation of residual stress-induced warpage under the SiNx PECVD coating process

Cited by 5 publications

References 24 publications

Residual stress tuning in UV- LIGA fabricated microstructures using deposition temperature and reverse pulse plating

Residual stress tuning in UV- LIGA fabricated microstructures using deposition temperature and reverse pulse plating

A review on warpage measurement metrologies for advanced electronic packaging

PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band

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