ESR Study of (La,Ba)MnO3/ZnO Nanostructure for Resistive Switching Device

Abstract

Structure, electric, and resonance properties of (La,Ba)MnO3/ZnO nanostructure grown on SrTiO3 (001) substrate have been investigated. It is found that at room temperature and relatively low voltages (|V |< 0.2 V), the structure shows good rectification behavior with rectification factor near 210. Resistive switching properties are detected after application of higher voltages. Temperature evolution of magnetic phase composition of the sample is analyzed in detail, based on results of electron spin resonance measurements. It is shown that magnetic state below 260 K is characterized by coexistence of ferromagnetic and paramagnetic phases, but no evidence of magnetic phase separation is revealed at higher temperatures. Different driving mechanisms for resistive switching, such as magnetic phase separation and/or electric field-induced migration of oxygen vacancies, are discussed in the context of obtained results.

Study of structural, optical and magnetic properties of cobalt doped ZnO nanorods

“…32 It nds various technological applications like sensors, light emitting diodes, lasers, solar cells, resistive switching devices, photocatalysts and most recently in spintronics, etc. [33][34][35][36][37][38][39][40][41][42] It has strong room temperature luminescence properties like ZnS nanoparticles 43 but the luminescence efficiency can be enhanced by using ZnO/ZnS nanocomposites or core shell of ZnS:Mn/ZnO nanocrystals. 45 ZnO is biocompatible and has been used as good antibacterial agent as well.…”