A novel ESD protection scheme for thinner gate-oxide core devices in ultra-deep-sub-micron process will be illustrated. The novel ESD protection scheme has demonstrated significant ESD improvements for 0.13um low power crystal oscillator buffer designs. With the new protection circuit, HBM ESD data can be improved from about 1.5KV original to greater than 5KV, and MM ESD data can be improved from 100V to more than 500V. The simulations and experimental silicon data will be presented.