ESD polarity effect study of monolithic, integrated DFB-EAM EML for 100/400G optical networks

Low-Frequency-Drop of Electroabsorption Modulated Lasers and the Improvement With Partially Corrugated Grating Based DFB Lasers

“…The rear facet (laser end) is coated with HR film of 90% reflectivity, while the front facet (EML output end) is AR coated with some residual reflection due to imperfect AR coating. When the grating ratio, which is defined as r= Lg/La, is equal to 1, the device becomes a conventional UG-DFB based EML, referred as UG-EML hereafter [16]- [18]. The device modeling of EMLs is conducted by using the time-dependent Transmission Line Laser Model (TLLM) of the VPIcomponentMaker Photonics Circuits Tool, which has been applied to analyze many circuits and optoelectronic devices, e.g., DFB laser, FP laser, passive feedback laser, hybrid integrated semiconductor laser, optically injected laser, and complex photonic integrated structures like EMLs [30]- [35].…”

106GBaud (200G PAM4) CWDM EML for 800G/1.6T Optical Networks and AI Applications

“…To empower 800G and 1.6T optical communications, an ultrahigh speed diode laser with ever-expanding bandwidth capacity becomes necessary. EML is a good candidate of such diode lasers because it possesses many performance advantages over directly modulated laser (DML), silicon photonics (SiPh) and vertical cavity surface emitting laser (VCSEL) (Takemi, 2022;Okuda et al, 2021;Honda et al, 2023;Huang et al, 2017). Figure 1 illustrates the roadmap of high-speed EML devices whereas the demand is driven by datacenter (DC) and AI waves.…”

35 km amplifier-less four-level pulse amplitude modulation signals enabled by a 23 GHz ultrabroadband directly modulated laser

“…Because of the low dispersion characteristic, the major challenge of band transmission is no longer waveform distortion. The dispersion mainly comes from bandwidth limitation totally can be compensated by FFE and employing (decision feedback equalization) DFE will not have significant improvement [11] .…”