ESD induced degradation mechanisms of InGaAsP/InP lasers

Magistrali, F.; Sala, D.; Salmini, G.; Vanzi, Massimo; Fantini, Fausto; Giansante, M.; Zazzetti, L.

doi:10.1002/qre.4680080319

Cited by 14 publications

(13 citation statements)

References 2 publications

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“…High reliability is required from such LDs, and the authors have studied a significant reliability index, namely, the tolerance to electrostatic discharge (ESD). ESD-induced degradation has been investigated by other research institutions, and it has been shown that LD facets are destroyed by a forward-biased ESD test [1][2][3]. In addition, our analysis has demonstrated that the damage is related to melting caused by light absorption at an active layer of the facet, just as in the case of COD (Catastrophic Optical Damage) [4].…”

Section: Introductionmentioning

confidence: 82%

Analysis of GaInAsP laser diodes degraded by light absorption at an active layer of the facet

Ichikawa

Ito

Fukuda

et al. 2010

Elect Comm in Japan

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SUMMARYElectrostatic discharge-induced degradation is one of the serious reliability problems of GaInAsP/InP laser diodes. The authors have conducted an analysis of electrostatic discharge-induced degradation, and have elucidated the principal degradation mechanism. The main cause of degradation is heating by light absorption at the active layer of the facet. This phenomenon is similar to the catastrophic optical damage that occurs in GaAs-based high-power laser diodes. The problem has become more serious with the recent tendency to high power demand. Therefore, technology to suppress against degradation is extremely important. Focusing on facet coating, which is one of the key processes to suppress facet degradation, we demonstrated that facet degradation can be successfully suppressed by inserting an ultrathin aluminum layer between the semiconductor and the dielectric coaling films. This effect is caused by a reduction of surface recombination. This degradation suppression technology has the potential to be applied not only to GaInAsP/InP laser diodes, but to any InP-based laser diodes.

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Section: Introductionmentioning

confidence: 82%

Analysis of GaInAsP laser diodes degraded by light absorption at an active layer of the facet

Ichikawa

Ito

Fukuda

et al. 2010

Elect Comm in Japan

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“…Variations occurring at a weak injection level are directly associated with a leakage current due to shunt leakage paths. Depending on the structure, this last contribution is modelled by a resistance (R sh ) placed in parallel with the junction branch, as reported by Magistrali et al 17 . In our case, leakage current is lower than 10 −12 A, corresponding to the current resolution of the measurement system, Agilent-4156C (Deshayes et al 22 ).…”

Section: Electrical Characterizationsmentioning

confidence: 98%

“…Our assumption is based on the fact that defects are located at the P − -InGaAs/N + -GaAs interface with an initial concentration of defects N def x→0 . After 600 and 1200 h, defect concentration has increased in the active zone as shown in Figure 10 according to Equation (17). With Equation (18) it is possible to estimate the increase in the defect density in the middle of the active zone.…”

Section: Variations In P(t T) and Its Variation P(t T ) Before Anmentioning

confidence: 98%

“…Physical equations have been extracted from diffusion phenomena using Fick's law (17), traditionally applied on semiconductors. In Equations (18) and (19) we give the current distribution versus temperature in the LED taking into account expression (17) and radiative and non-radiative recombination current contributions:…”

Section: Variations In P(t T) and Its Variation P(t T ) Before Anmentioning

confidence: 99%

“…An appropriate model has been developed to determine the correlation between optical power losses and failure mechanisms. In order to simplify this approach, both electrical and optical models are proposed 17,18 . Each electrical parameter, composed of the equivalent electrical circuit of the LED, is related to a part of the component structure and their gradual changes versus ageing time have been monitored.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Deshayes

Béchou

Verdier

et al. 2005

Quality & Reliability Eng

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Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10 000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240).

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