ESD field coupling study in relation with PCB GND and metal chassis

Lee, Jongsung; Pommerenke, David; Lim, Jaedeok; Seol, Byongsu

doi:10.1109/emczur.2009.4783413

Cited by 7 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The transient EM fields produced by the ESD generator during the discharge procedure are also important factors in the induced ESD coupling on the EUT [4,9,10,13,[20][21][22]. Experimental methods [23][24][25], full wave numerical modeling [26][27][28][29][30][31], circuit modeling [5,[32][33][34][35][36], and hybrid simulations of the EUT and ESD source [25,30] can all be used to carry out the ESD coupling study. However, it appears that modeling full wave has some constraints in computation resources and modeling accuracy based on the state of the art [12].…”

Section: Introductionmentioning

confidence: 99%

Electromagnetic Fields Radiated by Electrostatic Discharges: A Review of the Available Approaches

Fotis

2023

Electronics

View full text Add to dashboard Cite

Electrostatic discharge (ESD) is a physical phenomenon that may destroy electronic components due to its high discharge current that may reach a few amperes in just a few ns. However, another major aspect of ESD is the related high-frequency electromagnetic (E/M) fields radiated by the ESD event. The electronic equipment that is affected by the ESD phenomenon is additionally affected by the induced voltages caused by these E/M fields. This is the reason that the current version of the IEC 61000-4-2 on ESD has a special reference to these fields and the measurement setup. Starting with the classical formulation of these fields, this paper reviews the most popular techniques for calculating the ESD electromagnetic fields while also emphasizing the best methods for minimizing computational effort. There is also a separate section for the measurement techniques that have been applied in research works, whose outcomes could be implemented in the next revision of the IEC 61000-4-2. It is extremely important for the next revision to include these measurement setups and the E/M field sensors because the ESD generators should comply with certain values related to the E/M fields they produce.

show abstract

Section: Introductionmentioning

confidence: 99%

Electromagnetic Fields Radiated by Electrostatic Discharges: A Review of the Available Approaches

Fotis

2023

Electronics

View full text Add to dashboard Cite

show abstract

“…The ESD analysis using full-wave EM simulation provides more insight into the ESD noise coupling paths across multiple layers unlike [5], and thus making it more appropriate for the fast and efficient analysis of ESD coupling to DUT, compared to only experimental techniques [1,5,6,[10][11][12][13][14]. The existing studies related to ESD coupling analysis using full-wave numerical modeling, are either for a simple transmission line, circular loop and mobile phone-based DUT s [16][17][18]21] or lacks in the methodology for the systematic assessment of the sensitive traces for a realistic complete high-speed memory module.…”

Section: Introductionmentioning

confidence: 99%

Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules

et al. 2019

View full text Add to dashboard Cite

This paper presents, for the first time, a comprehensive detailed design of experiment (DOE) based system level electrostatic discharge (ESD) coupling analysis of high-speed dynamic random access (DRAM) memory modules. The sensitive traces and planes on the high-speed DRAM modules (DDR3 and DDR4) against injected ESD noise are determined through full-wave numerical simulations of the memory modules using the developed 3D model of the ESD gun. The validity of the full-wave numerical setup is confirmed through measurements, prior to the DOE analysis. Besides, current distribution analysis of DRAMs, seven different DOE configurations based on the number of installed decoupling capacitors (decaps) and their values on memory modules, are analyzed. The findings of DOE analysis suggests that DDR4 is less susceptible (70–80 % less) to the coupled ESD noise compared to DDR3. In addition, the command address (CA) nets are most sensitive in both memory modules. The utilization of the maximum possible number of decaps covering low, medium and high frequency ranges, as well as separate power and ground layers in memory stack-up design, increase the robustness and immunity of memory modules for the transient ESD event. The suggested approach offers time-saving and financial advantages to high-speed memory community, with the robust design of the memory products at the design stage before the start of the production phase.

show abstract

Electrostatic Discharge Simulation and Experimental Verification of a Simple PCB Device

Wang

Yang

2020

Symp Digest of Tech Papers

View full text Add to dashboard Cite

In this paper, a simple device under electrostatic discharge (ESD)event is considered. This work presents a simple experimental and simulated setup to measure ESD‐induced voltage to trace on a printed circuit board (PCB) when ESD current is injected directly onto the lumped element. Based on an ESD immunity test platform and ESD full‐wave model, the waveform of coupling voltage, which induced on a PCB, are measured at different discharging position. The voltage waveform of resistor on PCB with chip and without chip are compared to analyze the difference in two cases. The paper proposes a method that compares the measured results of experiment with simulation of full‐wave model. It is found that the results of simulation and experiment is in good match on the whole.

show abstract

ESD field coupling study in relation with PCB GND and metal chassis

Cited by 7 publications

References 6 publications

Electromagnetic Fields Radiated by Electrostatic Discharges: A Review of the Available Approaches

Electromagnetic Fields Radiated by Electrostatic Discharges: A Review of the Available Approaches

Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules

Electrostatic Discharge Simulation and Experimental Verification of a Simple PCB Device

Contact Info

Product

Resources

About