Simulation Methods for ESD Protection Development 2003
DOI: 10.1016/b978-008044147-4/50001-x
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ESD basics

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Cited by 2 publications
(1 citation statement)
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“…Due to the small size of semiconductor devices, the amount of energy that is deposited in the elements can be so high that the semiconductor material can suffer local melting. ESD (electrostatic discharge) and its associated high electric field can cause electric breakdown of the sensitive isolation layers, especially the thin gate oxides in CMOS (complementary metal oxide semiconductor) technologies [4][5][6]. To sum up, these effects can result in latent damage or even a breakdown of the whole IC (integrated circuit), which is in some cases a relevant safety issue.…”
Section: Introductionmentioning
confidence: 99%
“…Due to the small size of semiconductor devices, the amount of energy that is deposited in the elements can be so high that the semiconductor material can suffer local melting. ESD (electrostatic discharge) and its associated high electric field can cause electric breakdown of the sensitive isolation layers, especially the thin gate oxides in CMOS (complementary metal oxide semiconductor) technologies [4][5][6]. To sum up, these effects can result in latent damage or even a breakdown of the whole IC (integrated circuit), which is in some cases a relevant safety issue.…”
Section: Introductionmentioning
confidence: 99%