Magnetic Instability in Tunneling Magnetoresistive Heads Due to Temperature Increase During Electrostatic Discharge

Surawanitkun, Chayada; Kaewrawang, Arkom; Siritaratiwat, Apirat; Sivaratana, R.; Jutong, N.; Mewes, Claudia; Mewes, Tim

doi:10.1109/tdmr.2012.2194147

Cited by 10 publications

(2 citation statements)

References 27 publications

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“…In the past few decades, the outstanding features of the CPP-GMR reader, i.e., large magnetoresistive (MR) outputs, extremely low resistance area (RA) product, capability of transferring large amounts of data at high speeds, and low thermal fluctuation, have been extensively proved [ 2 , 7 , 8 , 9 ]. The very low RA product of the CPP-GMR devices is a key factor in achieving significantly higher ADs than the tunnel magnetoresistance (TMR) junctions used in the current situation [ 10 , 11 , 12 , 13 ]. The CPP-GMR sensors based on ferromagnetic Heusler alloys are the most capable integrations that can provide very high performance of CPP-GMR sensors nowadays [ 14 , 15 , 16 , 17 , 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

Free Layer Thickness Dependence of the Stability in Co2(Mn0.6Fe0.4)Ge Heusler Based CPP-GMR Read Sensor for Areal Density of 1 Tb/in2

Khunkitti

Siritaratiwat

Pituso³

2021

Micromachines

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Current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) read sensors based on Heusler alloys are promising candidates for ultrahigh areal densities of magnetic data storage technology. In particular, the thickness of reader structures is one of the key factors for the development of practical CPP-GMR sensors. In this research, we studied the dependence of the free layer thickness on the stability of the Co2(Mn0.6Fe0.4)Ge Heusler-based CPP-GMR read head for an areal density of 1 Tb/in2, aiming to determine the appropriate layer thickness. The evaluations were done through simulations based on micromagnetic modelling. The reader stability indicators, including the magnetoresistance (MR) ratio, readback signal, dibit response asymmetry parameter, and power spectral density profile, were characterized and discussed. Our analysis demonstrates that the reader with a free layer thickness of 3 nm indicates the best stability performance for this particular head. A reasonably large MR ratio of 26% was obtained by the reader having this suitable layer thickness. The findings can be utilized to improve the design of the CPP-GMR reader for use in ultrahigh magnetic recording densities.

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Section: Introductionmentioning

confidence: 99%

Free Layer Thickness Dependence of the Stability in Co2(Mn0.6Fe0.4)Ge Heusler Based CPP-GMR Read Sensor for Areal Density of 1 Tb/in2

Khunkitti

Siritaratiwat

Pituso³

2021

Micromachines

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“…Recently, Sun presented an analytical solution for estimating the critical current for magnetization reversal in the MTJ cell [5]. Moreover, the previous research indicates that the highest temperature during switching process occurs in the MgO barrier layer because of the lowest electrical conductivity [6]. Therefore, the MgO barrier thickness is an important factor for temperature increment in the MTJ cell.…”

Section: Introductionmentioning

confidence: 99%

Effect of MgO Barrier Thickness with Tilted Magnetization on Temperature Increase in Magnetic Tunnel Junction Devices during Current-Induced Magnetization Switching

Surawanitkun

2015

AMM

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Recently, there has been a growing interest in the thermal stability in magnetic tunnel junction (MTJ) devices with an aspect of the temperature increment during current-induced magnetization switching (CIMS) process. In this work, the temperature increment is explored with factors of the tile of the initial magnetization direction in free layer, θ0, and the MgO layer thickness for different pulse durations, tp. The results show that the highest temperature in MTJ nanopillar is significant at the θ0 of1°-5° and the pulse duration tp < 0.4 ns. Moreover, the temperature results with decreasing the MgO layer thickness are not considerable difference at θ0 of1°-5° for the same tp.

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Structural Size Effect with Altered Temperature on MgO-based Magnetic Tunnel Junction Device During Current Flow

Pomsanam

Warisarn

Siritaratiwat

et al. 2016

Procedia Computer Science

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Magnetic Instability in Tunneling Magnetoresistive Heads Due to Temperature Increase During Electrostatic Discharge

Cited by 10 publications

References 27 publications

Free Layer Thickness Dependence of the Stability in Co2(Mn0.6Fe0.4)Ge Heusler Based CPP-GMR Read Sensor for Areal Density of 1 Tb/in2

Free Layer Thickness Dependence of the Stability in Co2(Mn0.6Fe0.4)Ge Heusler Based CPP-GMR Read Sensor for Areal Density of 1 Tb/in2

Effect of MgO Barrier Thickness with Tilted Magnetization on Temperature Increase in Magnetic Tunnel Junction Devices during Current-Induced Magnetization Switching

Structural Size Effect with Altered Temperature on MgO-based Magnetic Tunnel Junction Device During Current Flow

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