ESCA and SEXAFS investigations of insulating materials for ULSI microelectronics

Finster, J.; Klinkenberg, E.-D.; Heeg, Jan; Braun, W.

doi:10.1016/0042-207x(90)94025-l

Cited by 89 publications

(47 citation statements)

References 16 publications

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“…And its N 1s binding energy are 397.7 eV (Fig. 4a), which is in agreement with that measured by Finster et al 23 When the molar contents of Si 3 N 4 in the starting materials are decreased to 16% and 6%, the as-sintered samples are composed of Si 2 N 2 O and cristobalite (III and IV in Fig. 1a).…”

Section: Stabilization Of β-Cristobalitesupporting

confidence: 88%

Preparation and properties of Si2N2O/β-cristobalite composites

Tong

Wang

Li³

et al. 2008

Journal of the European Ceramic Society

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Section: Stabilization Of β-Cristobalitesupporting

confidence: 88%

Preparation and properties of Si2N2O/β-cristobalite composites

Tong

Wang

Li³

et al. 2008

Journal of the European Ceramic Society

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“…Figure 10͑a͒ at 1000°C ͑solid triangles͒. In the as-deposited sample we identify one single component attributed to Si bonded to N in the form of stoichiometric silicon nitride, 47,48 confirming our RBS results. After 18 O 2 annealing at 1000°C, a shift of this single component to higher binding energies is observed.…”

Section: Mechanical and Structural Properties Of Si 3 N 4 Films Asupporting

confidence: 78%

Physicochemical, structural, and mechanical properties of Si3N4 films annealed in O2

Aguzzoli

Marin

Figueroa

et al. 2010

Journal of Applied Physics

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The physicochemical, structural, and mechanical properties of silicon nitride films deposited by radio frequency reactive magnetron sputtering were investigated before and after thermal annealing in 18 O 2 . As-deposited films were essentially amorphous, stoichiometric, and free from contaminants for a wide range of deposition parameters, with hardness figures ranging from 16.5-22 GPa, depending mainly on the deposition temperature. After 18 O 2 annealing at 1000°C, films hardness converged to 21 GPa, independently of the deposition temperature, which is explained based on the crystallization of the films at this annealing temperature. Moreover, oxygen is incorporated only in 7.5 nm of the Si 3 N 4 , forming silicon oxynitride at the top surface of the film, indicating a good oxidation resistance at high temperature. Finally, the elastic strain to failure ͑H 3 / E 2 ͒, which mimics the wear resistance of the film, doubles after the 1000°C annealing. These observations show the great potential of silicon nitride as a hard coating for high temperature applications.

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“…5 for different thicknesses of the sputtered SiO 2 layer. Together with the increasing SiO 2 /Si depth the shift of the O 1s line is observed towards the energy of 532.8 eV [13] corresponding to stoichiometric SiO 2 , see the inset of Fig. 5.…”

Section: Si + Implantationmentioning

confidence: 80%