In this work we demonstrate that Medium Energy Ion Scattering (MEIS) measurements in combination with Transmission Electron Microscopy (TEM) or Grazing Incidence Small Angle X-Ray Scattering (GISAXS) can provide a complete characterization of nanoparticle (NP) systems embedded into dielectric films. This includes the determination of the nanoparticle characteristics (location, size distribution and number concentration) as well as the depth distribution and concentration of the NP atomic components dispersed in the matrix. Our studies are performed considering a model case system consisting of planar arrangements of Au NPs (size range from 1 to 10 nm) containing three distinct Au concentrations embedded in a SiO2 film.
Influence of incoherent twin boundaries on the electrical properties of β-Ga 2 O 3 layers homoepitaxially grown by metal-organic vapor phase epitaxyThe formation of Au nanoparticles (NPs) in Au þ ion-implanted silicon nitride thin films and membranes was investigated as a function of post-implantation thermal treatments or room temperature electron irradiation at energies of 80, 120, 160, and 200 keV. The samples were characterized by Rutherford Backscattering Spectrometry and Transmission Electron Microscopy. High-temperature thermal annealing (1100 C, 1 h) resulted in the formation of Au particles with a mean diameter of %1.3 nm. In comparison, room-temperature electron irradiation at energies from 80 to 200 keV caused the formation of larger Au particles according to two growth regimes. The first regime is characterized by a slow growth rate and occurs inside the silicon nitride membrane. The second regime presents a fast growth rate and starts when Au atoms become exposed to the back free surface of the membrane. Realistic binary electron-atom elastic collision cross-sections were used to analyze the observed nanoparticle growth and membrane sputtering phenomena. The results obtained demonstrate that binary electron-atom elastic collisions can account for the microstructure modifications if the critical displacement energies for the sputtering of N and Si atoms are around 14 6 3 eV, and the displacement energy for surface located Au atoms is approximately 1.25 6 0.2 eV. Irradiation experiments using focused electron probes demonstrate that the process provides fine control of nanoparticle formation, resulting in well-defined sizes and locations. Published by AIP Publishing.
The physicochemical, structural, and mechanical properties of silicon nitride films deposited by radio frequency reactive magnetron sputtering were investigated before and after thermal annealing in 18 O 2 . As-deposited films were essentially amorphous, stoichiometric, and free from contaminants for a wide range of deposition parameters, with hardness figures ranging from 16.5-22 GPa, depending mainly on the deposition temperature. After 18 O 2 annealing at 1000°C, films hardness converged to 21 GPa, independently of the deposition temperature, which is explained based on the crystallization of the films at this annealing temperature. Moreover, oxygen is incorporated only in 7.5 nm of the Si 3 N 4 , forming silicon oxynitride at the top surface of the film, indicating a good oxidation resistance at high temperature. Finally, the elastic strain to failure ͑H 3 / E 2 ͒, which mimics the wear resistance of the film, doubles after the 1000°C annealing. These observations show the great potential of silicon nitride as a hard coating for high temperature applications.
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