Erratum to: “Self-limited SiH2Cl2 gas source molecular beam epitaxy on Si(1 0 0)” [Surf. Sci. 491 (2001) 275–299]

Fehrenbacher, M.; Rauscher, H.; Behm, R. J.

doi:10.1016/s0039-6028(02)01382-1

Cited by 2 publications

(1 citation statement)

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“…Hence, the processes and consequences of the production of pits and regrowth islands on Si(100)-(2ϫ1) have attracted extensive attention. [6][7][8][9][10][11][12][13] To date, however, there have been no studies of the step free energies on Si͑100͒ with halogen adatoms, though such investigations would provide insights into the effects of a large class of adsorbates.…”

Section: Introductionmentioning

confidence: 99%

Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K

Khare

Nakayama

et al. 2003

Phys. Rev. B

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The evolution and equilibrium morphology of Si͑100͒ with 0.1 monolayer of adsorbed Cl was studied at 700 K with variable temperature scanning tunneling microscopy. Chlorine caused surface roughening with monolayer pits and regrowth islands. The aspect ratio of these features then increased with their size because of the surface-stress anisotropy. By analyzing the equilibrium feature shape as a function of size, we found that the ratio of step free energies for A-and B-type steps was F b /F a ϭ2.44 for regrowth islands and 3.33 for pits. These ratios are higher than for clean Si͑100͒, F b /F a ϭ2.13, because the steps are destabilized.

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Section: Introductionmentioning

confidence: 99%

Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K

Khare

Nakayama

et al. 2003

Phys. Rev. B

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Initial-Stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing

Takami¹,

Kusaka

Kusunoki

2006

e-J. Surf. Sci. Nanotech.

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The initial stage of the structural change in a clean Si(100)-2 × 1 surface induced by annealing at 640• C and exposure to ethylene gas was studied by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The RHEED pattern included SiC spots and STM images revealed SiC particles on the surface, which confirmed the carbonization of the Si surface. At a different area of the same sample, the RHEED pattern showed both twice the periodicity of surface spots which indicates a flat surface region and transmitted bulk Si spots which indicates the initial stage of voids. The STM images of the flat region showed a 2 × n (6 ≤ n ≤ 12) reconstruction. The topography of the 2 × n STM image depended on the bias voltage. The 2 × n reconstruction was clearly induced by carbon impurities; STM images were similar to those in previous studies in which structures were formed by various kinds of impurities or contaminations.

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Erratum to: “Self-limited SiH2Cl2 gas source molecular beam epitaxy on Si(1 0 0)” [Surf. Sci. 491 (2001) 275–299]

Cited by 2 publications

References 0 publications

Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K

Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K

Initial-Stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing

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