Abstract:The initial stage of the structural change in a clean Si(100)-2 × 1 surface induced by annealing at 640• C and exposure to ethylene gas was studied by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The RHEED pattern included SiC spots and STM images revealed SiC particles on the surface, which confirmed the carbonization of the Si surface. At a different area of the same sample, the RHEED pattern showed both twice the periodicity of surface spots which indicates a … Show more
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