Erratum: “Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by rf magnetron sputtering” [J. Appl. Phys. <b>81</b>, 7764 (1997)]

Kim, Kun Ho; Park, Ki Cheol; Young, Dae

doi:10.1063/1.368071

Cited by 49 publications

(63 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, for those reasons, Al doped ZnO (AZO) thin films are attracting much more attention than the ITO because they have a better resistivity, higher transmittance, non-toxicity and lower cost than the ITO [4]. In generally, TCO thin films were prepared by many methods as spray pyrolysis [5,6], pulsed laser deposition [7,8], chemical vapor deposition [9,10], sol-gel [11] and sputtering method [12,13]. Especially the preparation of TCO thin films is requested in applications for flexible display devices at low temperature processing.…”

Section: Introductionmentioning

confidence: 99%

Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate

Kim¹,

Rim²,

Keum³

et al. 2008

J Electroceram

View full text Add to dashboard Cite

Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. The FTS method is called a plasma-free sputter method because the substrate is located apart from plasma. This system can deposit the thin film with low bombardment by high energetic particles in plasma such as γ-electrons, negative ions and reflected Ar atoms. ITO and AZO thin films were deposited on glass substrate at room temperature with oxygen gas flow rate and input power. And the electrical, structural and optical properties of the thin films were investigated. As a result, the resistivity of ITO, AZO thin film is 6×10 −4 Ω cm, 1× 10 −3 Ω cm, respectively. And the optical transmittance of as-deposited thin films is over 80% at visible range.

show abstract

Section: Introductionmentioning

confidence: 99%

Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate

Kim¹,

Rim²,

Keum³

et al. 2008

J Electroceram

View full text Add to dashboard Cite

show abstract

“…In summary, laser post-processing of nanomaterials can enable a manufacturing paradigm shift with drastic productivity enhancement. Previous reports mostly focused on ZnO thin films either as a transparent oxide thin film [15,16,18,32,34] or as an active channel layer for field-effect transistors without demonstrating the tunability of ZnO thin-film properties for both applications [22,25,26]. In this letter, we present a simple method for synthesizing a transparent, high-concentration undoped ZnO NP solution and demonstrate that a spin-coated undoped ZnO thin film can be transformed to a highly conductive transparent thin film by laser annealing, as well as to an active channel layer of a thin-film transistor simply by changing the laser process parameters.…”

Section: Introductionmentioning

confidence: 99%

“…ZnO is one of the most promising candidates for ITO substitutes due to its non-toxicity, low cost and relatively easy synthesis. ZnO thin films are usually deposited by a vacuum process such as DC or RF magnetron sputtering, or pulsed laser deposition (PLD) [5,[15][16][17][18][19][20][21] since those methods facilitate easier doping procedures yielding ITO-comparable high conductivity. Vacuum processes, however, need additional expensive equipment and hence complicate the fabrication sequence.…”

Section: Introductionmentioning

confidence: 99%

Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

Lee¹,

Pan²,

Ko³

et al. 2012

Appl. Phys. A

View full text Add to dashboard Cite

A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75 × 10 −2 cm, exhibiting a factor of 10 5 higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors.

show abstract

“…Al-doped ZnO thin films, among heavily doped ZnO thin films prepared by various depositional techniques, have attracted considerable interest because of their low resistivity and high transmittance in the visible region [6][7][8]. Among the various methods, pulsed laser deposition (PLD) is a process with advantages of high quality crystalline and epitaxial growth over other techniques [9,10].…”

Section: Introductionmentioning

confidence: 99%

“…ZnO is an n-type semiconductor due to intrinsic defects such as oxygen vacancies and zinc interstitials. In particular, the heavily doped ZnO film with a carrier concentration of approximately 10 20 cm −3 has been investigated for use as a transparent conduction oxide (TCO) [6].…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of epitaxial and polycrystalline undoped and Al-doped ZnO thin films grown by pulsed laser deposition

Noh

Kim

et al. 2008

J Electroceram

View full text Add to dashboard Cite

Undoped and Al-doped (1.6%) ZnO films were prepared on (0001) sapphire and fused silica substrates using a pulsed laser deposition technique. The ZnO films on sapphire substrates were epitaxially grown, while the ZnO films on fused silica substrates were texturally grown. The films on sapphire substrates were ordered along the inplane direction and had grains in which the c-axis was well aligned normal to the substrate. However, the films on fused silica were randomly oriented along the in-plane direction and had poor c-axial aligned grains. The structure analyses showed that the epitaxial ZnO films had low-angle grain boundaries, while the textured polycrystalline ZnO films had high-angle tilt and twist grain boundaries. The nature of the grain boundaries influenced the electrical and optical properties of the undoped and Al-doped ZnO films. Resistivity, Hall mobility, carrier concentration, and near band edge emission of the films were measured at room temperature and discussed in connection with the nature of grain boundaries.

show abstract

Erratum: “Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by rf magnetron sputtering” [J. Appl. Phys. 81, 7764 (1997)]

Cited by 49 publications

References 0 publications

Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate

Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate

Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

Electrical and optical properties of epitaxial and polycrystalline undoped and Al-doped ZnO thin films grown by pulsed laser deposition

Contact Info

Product

Resources

About