Erratum: Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses [Phys. Rev. B<b>77</b>, 195212 (2008)]

Harada, Kentaro; Riede, Moritz; Leo, Karl; Hild, Olaf R.; Elliott, C. Michael

doi:10.1103/physrevb.78.159902

Cited by 29 publications

(39 citation statements)

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“…2,7 It is also a p-dopant in pentacene, as its electron affinity ͑5.24 eV͒ is greater than the ionization energy of the host ͑5.0 eV͒. 2,8,9 Electrical doping is confirmed by recent current-voltage measurements performed in our laboratory, which show an increase in conductivity of more than two orders of magnitude upon doping pentacene with 0.5% F 4 -TCNQ. 10 In the present work, we grow, by thermal evaporation, well ordered multilayer films of pentacene on the ͑001͒ surface of bismuth ͑Bi͒ on Si͑111͒.…”

Section: Introductionsupporting

confidence: 66%

Isolated molecular dopants in pentacene observed by scanning tunneling microscopy

Kahn

2009

Phys. Rev. B

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Doping is essential to the control of electronic structure and conductivity of semiconductor materials. Whereas doping of inorganic semiconductors is well established, doping of organic molecular semiconductors is still relatively poorly understood. Using scanning tunneling microscopy, we investigate, at the molecular scale, surface and subsurface tetrafluoro-tetracyanoquinodimethane p-dopants in the prototypical molecular semiconductor pentacene. Surface dopants diffuse to pentacene vacancies and appear as negatively charged centers, consistent with the standard picture of an ionized acceptor. Subsurface dopants, however, have the effect of a positive charge, evidence that the donated hole is localized by the parent acceptor counterion, in contrast to the model of doping in inorganic semiconductors. Scanning tunneling spectroscopy shows that the electron potential energy is locally lowered near a subsurface dopant feature, in agreement with the localized hole model.

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Section: Introductionsupporting

confidence: 66%

Isolated molecular dopants in pentacene observed by scanning tunneling microscopy

Kahn

2009

Phys. Rev. B

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“…In the common perception, which is clearly inferred from inorganic semiconductor physics, ground-state integer charge transfer (ICT) is thought to occur between OSC and p-(n-)dopant leading to a localized negative (positive) charge on the ionized dopant and a mobile hole (electron), that is, a positive (negative) polaron within the OSC matrix[10,59,[96][97][98][99][100], as schematically illustrated for p-type doping inFigure 4a. This simple picture is frequently found in literature both for doped CPs, as exemplarily shown inFigure 4bfor F 4 TCNQ-doped P3HT[94], and COMs, as shown inFigure 4cfor p-and ndoped PEN[95]: For p-doping, an electron from the HOMO of the OSC is assumed to hop into the LUMO of the electron acceptor, and vice versa for n-doping. In the following, experimental data in pertinent literature is summarized for the doping of both types of OSCs, basis of which the validity of above picture of the fundamental processes at work in the molecular electrical doping of OSCs can be assessed.…”

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confidence: 97%

“…Copyright 2013 by the American Physical Society. (c) Schematic energy level diagram for p-and n-doping of PEN,where in both cases ICT is assumed[95]. Reprinted figure with permission from K.Harada et al., Phys.…”

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confidence: 97%

Toward a comprehensive understanding of molecular doping organic semiconductors (review)

Salzmann

Heimel

2015

Journal of Electron Spectroscopy and Related Phenomena

119

137

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“…For example, the I D value at V D = À2 V and V G = À25 V was improved from À0.21 to À1.36 mA by the contact-area-limited doping in this work. 33,34 In the doped device, the thickness of the tunneling barrier at the source/semiconductor interface is considerably reduced due to a large number of acceptor dopants in the p + layer, resulting in the enhancement of hole injection from the source toward the p + layer. 3, where the major parameters are the impurity concentration of the p layer of 1 Â 10 16 cm À3 and impurity concentration of the p + layer of 1 Â 10 19 cm À3 .…”

Section: View Article Onlinementioning

confidence: 99%

Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact

Noda

Wada

Toyabe

2015

Phys. Chem. Chem. Phys.

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Effects of contact-area-limited doping for pentacene thin-film transistors with a bottom-gate, top-contact configuration were investigated. The increase in the drain current and the effective field-effect mobility was achieved by preparing hole-doped layers underneath the gold contact electrodes by coevaporation of pentacene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), confirmed by using a thin-film organic transistor advanced simulator (TOTAS) incorporating Schottky contact with a thermionic field emission (TFE) model. Although the simulated electrical characteristics fit the experimental results well only in the linear regime of the transistor operation, the barrier height for hole injection and the gate-voltage-dependent hole mobility in the pentacene transistors were evaluated with the aid of the device simulation. This experimental data analysis with the simulation indicates that the highly-doped semiconducting layers prepared in the contact regions can enhance the charge carrier injection into the active semiconductor layer and concurrent trap filling in the transistor channel, caused by the mitigation of a Schottky energy barrier. This study suggests that both the contact-area-limited doping and the device simulation dealing with Schottky contact are indispensable in designing and developing high-performance organic thin-film transistors.

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Erratum: Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses [Phys. Rev. B77, 195212 (2008)]

Cited by 29 publications

References 0 publications

Isolated molecular dopants in pentacene observed by scanning tunneling microscopy

Isolated molecular dopants in pentacene observed by scanning tunneling microscopy

Toward a comprehensive understanding of molecular doping organic semiconductors (review)

Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact

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