Erratum: ‘‘Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane’’ [Appl. Phys. Lett. 60, 489 (1992)]

Very High Silicon Concentration by MOVPE in GaAs

“…The intersection of the experimental Fermi level E f determined from room temperature PL spectra with the network curves calculated from equation (11) for different compensation ratios, allows us to deduce the compensation ratio of the samples (Fig. 5).…”

Silicon-induced faceting of vicinal GaAs(001)

“…Others have investigated the incorporation efficiency of Si into GaAs as a function of precursors used, substrate miscut, and temperature. 27,28 Using silane (SiH 4 ) as the silicon precursor, the ratio of the solid composition X sol ϵ͓Si͔/͓Ga͔ to the gas-phase composition X gas ϵ͓SiH 4 ͔/͓TMGa͔ has been found to be 0.1 for gas-phase compositions up to 5ϫ10 Ϫ2 , 27 when TBAs is used as the arsenic source. The use of disilane (Si 2 H 6 ) as the Si precursor is generally found to have at least as high an incorporation efficiency as silane, per silicon atom, 29 so we estimate the ratio of X sol to X gas ϵ͓Si 2 H 6 ͔/͓TMGa͔ in our case to be 0.2.…”

LP-MOVPE growth of InAs quantum dots using tertiarybutylarsine (TBA) in pure N2 ambient

“…For safety reasons therefore several alternative, less toxic group V-sources have been investigated. Recently, organo-arsines, such as tertiarybutylarsine (TBA) [1][2][3][4], have attracted much attention.…”