Erratum: ‘‘Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy’’ [Appl. Phys. Lett. <b>67</b>, 1865 (1995)]

Kolodzey, J.; O’Neil, P.; Zhang, S.; Orner, B. A.; Roe, K.; Unruh, Karl; Swann, C.P.; Waite, M. M.; Shah, S. Ismat

doi:10.1063/1.116796

Cited by 2 publications

(1 citation statement)

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“…They showed that the bandgap of mc-Ge 0:96 C 0:04 was 1.1 eV and that the absorption coefficient of mc-Ge 1Àx C x films rapidly increased near the band gap energy. The properties of epitaxial Ge 1Àx C x films deposited by molecular beam epitaxy (MBE) were also reported by Kolodzey et al 2) They reported that the band gap of Ge 1Àx C x (x ¼ 0 { 0:03) increased to 0.875 eV with increasing carbon content of the films. These reports suggest that mc-Ge 1Àx C x is a promising candidate for the absorber material in solar cells.…”

Section: Introductionsupporting

confidence: 57%

Preparation of Microcrystalline Germanium Carbon Thin Films by Hot-Wire Chemical Vapor Deposition Using Dimethylgermane

Yashiki¹,

Miyajima²,

Yamada

et al. 2007

jjap

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Microcrystalline germanium carbon (mc-Ge 1Àx C x ) thin films were deposited by hot-wire chemical vapor deposition using dimethylgermane. We investigated the influence of the hydrogen dilution ratio on the deposition rate and film structure. The deposition rate and crystal orientation of the films were strongly affected by the hydrogen dilution ratio. The conductivity of the films was changed with the structure of the films from amorphous to crystalline. The conductivity of the amorphous film was 3:04 Â 10 À5 S/cm and that of the microcrystalline films was up to 0.1 S/cm. The carbon concentrations of the films were about 2 at. %, as estimated by X-ray photoelectron spectroscopy. The energy at which the absorption coefficient becomes 10 4 cm À1 for the mc-Ge 0:98 C 0:02 film is 1.30 eV, which is 0.25 eV higher than that of c-Ge.

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Section: Introductionsupporting

confidence: 57%