Erratum: Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response [Phys. Rev. B<b>86</b>, 125308 (2012)]

Iorsh, Ivan; Glauser, Marlene; Rossbach, Georg; Levrat, Jacques; Cobet, Munise; Butté, R.; Grandjean, N.; Kaliteevski, M. A.; Abram, R. A.; Kavokin, Alexey

doi:10.1103/physrevb.90.119903

Cited by 7 publications

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“…The system of equations (1-4) is then numerically solved using the stochastic Runge-Kutta algorithm. For the numerical calculation we use the following parameters corresponding to conventional GaN -based laser diodes [43] , where brackets symbolize averaging over the noise. We next compare the results of the experiment and numerical simulations.…”

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Output polarization characteristics of a GaN microcavity diode polariton laser

et al. 2016

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We report the steady state output polarization characteristics of GaN-based microcavity polariton lasers operated with electrical injection at room temperature. The output is unpolarized below the non-linear threshold injection current and is linearly polarized above it with a maximum degree of polarization of ~ 22 %. The results have been analyzed theoretically and the calculated results are in agreement with the measured data. We have also measured the polarization resolved output light-current characteristics, wherein a distinct lowering of the non-linear threshold is observed in one device. This is interpreted in terms of spatially inhomogeneous lifting of degeneracy and polarization splitting in the microcavity.

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Output polarization characteristics of a GaN microcavity diode polariton laser

et al. 2016

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“…The density of free carriers ℎ can be generally described, i.e. in strong as well as weak coupling regimes, by a rate 24,25 where is the pump rate and the loss rate. In the steady state ( ℎ ⁄ = 0), this yields ℎ = / .…”

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Observation of the Transition from Lasing Driven by a Bosonic to a Fermionic Reservoir in a GaAs Quantum Well Microcavity

et al. 2016

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We show that by monitoring the free carrier reservoir in a GaAs-based quantum well microcavity under nonresonant pulsed optical pumping, lasing supported by a fermionic reservoir (photon lasing) can be distinguished from lasing supported by a reservoir of bosons (polariton lasing). Carrier densities are probed by measuring the photocurrent between lateral contacts deposited directly on the quantum wells of a microcavity that are partially exposed by wet chemical etching. We identify two clear thresholds in the input-output characteristic of the photoluminescence signal which can be attributed to polariton and photon lasing, respectively. The power dependence of the probed photocurrent shows a distinct kink at the threshold power for photon lasing due to increased radiative recombination of free carriers as stimulated emission into the cavity mode sets in. At the polariton lasing threshold on the other hand, the nonlinear increase of the luminescence is caused by stimulated scattering of exciton-polaritons to the ground state which do not contribute directly to the photocurrent.

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“…As excitons are bosons, the relaxation of hot excitons can occur via spontaneous and stimulated scattering processes. The probability of the stimulated scattering increases proportional to the final‐state occupation . Thus, if the macroscopic population of the ground state occurs early (i.e., nonzero population of the ground state as in the case of high excitation power), the relaxation of the hot exciton will be more efficient meaning that the PL signal will be established after a shorter time after the laser pulse, as shown in Fig.…”

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Nonlinear behavior of the emission in the periodic structure of InAs monolayers embedded in a GaAs matrix

Pozina

Kaliteevski

Nikitina

et al. 2016

Phys. Status Solidi B

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We report time‐resolved photoluminescence (TRPL) measurements performed at different temperatures for the Bragg structure containing 60 InAs monolayer‐based quantum wells (QWs) periodically arranged in a GaAs matrix. TRPL data reveal an appearance of the additional superradiant (SR) mode originated from coherent collective interaction of QWs. The SR mode is not manifested in the case if a small number of QWs is excited, then only an exciton emission related to the InAs QWs dominates the PL spectrum. The SR mode demonstrates a superlinear dependence of the intensity and radiative decay rate on the excitation power and its intensity increases at elevated temperatures compared to the excitonic emission. The photoluminescence delay time is much shorter for the SR mode indicating that the relaxation of hot excitons can occur via stimulated scattering processes. The specific behavior of the SR emission can have a strong potential for different applications such as optical logic devices, superluminescent diodes, optical switches, and low‐threshold lasers. Time‐resolved photoluminescence image at low temperature for the Bragg structure consisting of InAs monolayer‐based quantum wells (inset).

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Erratum: Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response [Phys. Rev. B86, 125308 (2012)]

Cited by 7 publications

References 0 publications

Output polarization characteristics of a GaN microcavity diode polariton laser

Output polarization characteristics of a GaN microcavity diode polariton laser

Observation of the Transition from Lasing Driven by a Bosonic to a Fermionic Reservoir in a GaAs Quantum Well Microcavity

Nonlinear behavior of the emission in the periodic structure of InAs monolayers embedded in a GaAs matrix

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