Erratum: First-order intervalley scattering in low-dimensional systems [Phys. Rev. B<b>65</b>, 212304 (2002)]

Monsef, Florian; Dollfus, Philippe; Galdin, S.; Bournel, A.

doi:10.1103/physrevb.67.059903

Cited by 12 publications

(10 citation statements)

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“…22 g-LO, f -LA, and f -TO interactions are permitted in a zero-order model, whereas g-LA, g-TA, and f -TA interactions are permitted only as first-order processes 23 and are somewhat slower. The interactions are characterized by a deformation potential and a frequency, ω 0 , which for intervalley interactions is nonzero.…”

Section: Carrier-phonon Scatteringmentioning

confidence: 99%

Intersubband carrier scattering inn- andp−Si∕SiGequantum wells with diffuse interfaces

2008

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Scattering rate calculations in two-dimensional Si/Si1−xGex systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces however, may exhibit diffuse Ge profiles either by design or as a limitation of the growth process. It is shown here that alloy disorder scattering dramatically increases with Ge interdiffusion in (100) and (111) n-type quantum wells, but remains almost constant in (100) p-type heterostructures. It is also shown that smoothing of the confining potential leads to large changes in subband energies and scattering rates and a method is presented for calculating growth process tolerances.

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Section: Carrier-phonon Scatteringmentioning

confidence: 99%

Intersubband carrier scattering inn- andp−Si∕SiGequantum wells with diffuse interfaces

2008

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“…we use the scattering rate derived in Ref [14], i.e. by including the non parabolicity of the conduction band a 0 is the lattice parameter [15].…”

Section: B Electron-phonon Scatteringmentioning

confidence: 99%

Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation

Monsef

Dollfus

Galdin‐Retailleau

et al. 2004

Journal of Applied Physics

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The electron transport in the two-dimensional gas formed in tensile-strained Si 1-x Ge x /Si/Si 1-x Ge x heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped structures. The calculation matches very well the experimental results over a wide range of electron density. The mobility typically varies between 1100 cm 2 /Vs in highly-doped structures and 2800 cm 2 /Vs at low electron density. The mobility is shown to be significantly influenced by the thickness of the spacer layer separating the strained Si channel from the pulse-doped supply layers. Then the electron transport is investigated in a gated modulation-doped structure in which the contribution of parasitic paths is negligible. The mobility is shown to be higher than in comparable ungated structures and dependent on the gate voltage, as a result of the electron density dependence of remote impurity screening.

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“…both to X z+ , and the same is assumed for interface roughness and alloy disorder scattering. The phonon scattering rates are calculated according to [6], and the last two scattering rates according to [7].…”

Section: Theory and Computational Detailsmentioning

confidence: 99%

n-Si/SiGe quantum cascade structures for THz emission

Ikonić

Lazić

Milanović

et al. 2006

Journal of Luminescence

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In this work we report on modelling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (X z ) and in-plane (X xy ) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using the rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbour periods. The acoustic phonon, optical phonon, alloy and interface roughness scattering are taken in the model. The calculated U/I dependence and gain profiles are presented for a couple of QC structures.

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Erratum: First-order intervalley scattering in low-dimensional systems [Phys. Rev. B65, 212304 (2002)]

Cited by 12 publications

References 0 publications

Intersubband carrier scattering inn- andp−Si∕SiGequantum wells with diffuse interfaces

Intersubband carrier scattering inn- andp−Si∕SiGequantum wells with diffuse interfaces

Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation

n-Si/SiGe quantum cascade structures for THz emission

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