Erratum: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications

Kelzenberg, Michael D.; Boettcher, Shannon W.; Petykiewicz, Jan; Turner-Evans, Daniel B.; Putnam, Morgan C.; Warren, Emily L.; Spurgeon, Joshua M.; Briggs, Ryan M.; Lewis, Nathan S.; Atwater, Harry A.

doi:10.1038/nmat2727

Cited by 717 publications

(142 citation statements)

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“…This finding is consistent with NWAs of many diverse materials (e.g., silicon nanowire arrays) and denotes low reflectivity caused by high levels of light trapping. 8,9 We also observed that light reached deep inside the array. Under oblique illumination, that is to say, with the incident light propagation vector non-parallel to the nanowire orientation, the reflected visible light is highly polarized.…”

mentioning

confidence: 58%

“…In investigations of PV in solar cells, researchers have discovered that the nanostructuring of bulk materials into wires or sharp points aligned along the optical incident direction results in reduced optical reflection and induced light trapping. 8,9 There are many mechanisms that may play a role in this effect. NWA optical reflectivity is low because the electromagnetic field penetrates deep in the material.…”

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confidence: 99%

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Photoresponse in arrays of thermoelectric nanowire junctions

Huber

Scott

Johnson

et al. 2013

Applied Physics Letters

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We report the first demonstration of optical detection by thermoelectric nanowire junctions. We employed devices composed of bismuth nanowire arrays which are capped with a transparent indium tin oxide electrode. The incident surface features very low optical reflectivity and enhanced light trapping. The unique attributes of the thermoelectric arrays are the combination of strong temporal and optical wavelength dependences of the photocurrent. Under infrared illumination, the signal can be completely described by thermoelectric effects considering cooling rates given by heat diffusion through the array. In addition, under visible illumination, we observe a photovoltaic response.

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mentioning

confidence: 58%

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confidence: 99%

Photoresponse in arrays of thermoelectric nanowire junctions

Huber

Scott

Johnson

et al. 2013

Applied Physics Letters

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“…Surprisingly, even NWs as thin as 200 nm can be efficient absorbers [24]. For these reasons, many research groups are now working on NW-based solar cells using various designs and materials [9][10][11][12][25][26][27][28][29][30][31][32][33][34].…”

Section: Nanowire Solar Cellsmentioning

confidence: 99%

Doping of semiconductor nanowires

2011

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9Populärvetenskaplig sammanfattning 11List of papers 15 AbstractIn this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. After growth the nanowires were characterized using various techniques, including photoluminescence, transmission electron microscopy and electrical measurements of contacted nanowires. Different III-V materials were studed, both binary materials such as InP and GaAs, and ternary materials such as Ga x In 1-x P. To achieve p-and n-doping, different precursors were employed.The results show that successful p-and n-doping can be achieved in many materials. The in situ doping is shown to affect the nanowire growth strongly, but differently depending on the combination of material and dopant. The main effects are related to the growth rate and the crystal structure. It is shown that the ndopant H 2 S increases the growth rate and induces wurtzite crystal structure in InP nanowires, while the p-dopant DEZn gives an unchanged growth rate with zinc blende crystal structure. En solcells förmåga att omvandla solljus till elektricitet kallas för verkningsgrad. Idag baseras de flesta solceller på grundämnet kisel, vilket är samma material som är basen för elektroniken i alla datorer. Detta material ger en medelmåttig verkningsgrad för ett medelmåttigt pris. För att göra solceller ännu mer användningsbara utvecklar många forskare och företag nya sorters solceller, som är billigare eller bättre än kiselceller. De mest effektiva solcellerna görs av så kallade III-V ("tre-fem") material, som kan ge ungefär dubbelt så mycket eleffekt som kiselceller. Tyvärr är III-V material dyra, vilket gör dessa solceller olönsamma för de flesta tillämpningar.Ett möjligt sätt att sänka kostnaderna är att göra III-V materialet i form av små, avlånga kristaller som kallas nanotrådar. Dessa nanotrådar är ungefär en tusendel så tjocka som ett hårstrå, vilket betyder att deras diameter är ungefär samma som ljusets våglängd. Mängden III-V material som används kan då minskas på två sätt. Dels kan man använda ett annat, billigare material som bärande substrat, dels behöver man bara täcka ungefär en tiondel av ytan. Nanotrådarna fungerar som små antenner som effektivt fångar in solljuset. I en solcell absorberas ljusenergin av elektroner, som tvingas i en bestämd riktning vilket skapar en elektrisk ström. För att göra detta används så kallad dopning, 13 vilket innebär att man stoppar in kontrollerade mängder av speciella föroreningar i den annars mycket rena kristallen. Med n-dopning skapar man ett överskott av elektroner, och med p-dopning skapar man ett underskott. Kombinerar man ett pdopat och ett n-dopat område får man en p-n övergång, som också kallas en diod. Det är i övergången mellan p-dopning och n-dopning som elektronerna tvingas i en speciell riktning, nämligen mot den n-dopade sidan. För att nanotrådarna ska fungera som solceller måste dä...

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“…In a parallel research direction the aim is to grow the III-V nanowires separately and then place them on top of a Si cell by embedding them in a transparent polymer. This approach is compatible with aerotaxy [18], the high-throughput, low-cost, substrate-free nanowire fabrication technique, as well as with traditional VLS-based nanowire growth combined with subsequent removal of the nanowires from the growth substrate in a peel-able polymer membrane [19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Absorption and transmission of light in III–V nanowire arrays for tandem solar cell applications

et al. 2017

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III–V semiconductor nanowires are a platform for next-generation photovoltaics. An interesting research direction is to embed a nanowire array in a transparent polymer, either to act as a stand-alone flexible solar cell, or to be stacked on top of a conventional Si bottom cell to create a tandem structure. To optimize the tandem cell performance, high energy photons should be absorbed in the nanowires whereas low energy photons should be transmitted to and absorbed in the Si cell. Here, through optical measurements on 1.95 eV bandgap GaInP nanowire arrays embedded in a polymer membrane, we identify two mechanisms that could be detrimental for the performance of the tandem cell. First, the Au particles used in the nanowire synthesis can absorb >50% of the low-energy photons, leading to a <40% transmittance, even though the Au particles cover <15% of the surface area. The removal of the Au particles can recover the transmission of low energy photons to >80%. Second, after the removal of the Au particles, a 40% reflectance peak shows up due to resonant back-scattering of light from in-plane waveguide modes. To avoid the excitation of these optical modes in the nanowire array, we propose to limit the pitch of the nanowire array.

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Erratum: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications

Cited by 717 publications

References 0 publications

Photoresponse in arrays of thermoelectric nanowire junctions

Photoresponse in arrays of thermoelectric nanowire junctions

Doping of semiconductor nanowires

Absorption and transmission of light in III–V nanowire arrays for tandem solar cell applications

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