Erratum: Eight-bandk⋅pmodel of strained zinc-blende crystals [Phys. Rev. B41, 11 992 (1990)]

Bahder, Thomas B.

doi:10.1103/physrevb.46.9913

Cited by 65 publications

(42 citation statements)

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“…We indeed want to investigate their electrically pumped lasing potential. Calculations were performed using 8-band k.p model that takes into account the influence of strain 29,30 . This model includes interband transitions from valence to conduction band, which may lead to absorption or gain, and also the inter-valence band transitions (between heavy hole (HH), light hole (LH) and spin-orbit (SO) bands), which bring in absorption, as previously described in 13 .…”

Section: Resultsmentioning

confidence: 99%

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

et al. 2015

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The recent observation of a fundamental direct bandgap for GeSn group IV alloys and the demonstration of low temperature lasing provide new perspectives to the fabrication of Si photonic circuits. This work addresses the progress in GeSn alloy epitaxy aiming at room temperature GeSn lasing. Chemical vapor deposition of direct bandgap GeSn alloys with a high -to L-valley energy separation and large thicknesses for efficient optical mode confinement is presented and discussed. Up to 1 µm thick GeSn layers with Sn contents up to 14 at.% were grown on thick relaxed Ge buffers, using Ge 2 H 6 and SnCl 4 precursors. Strong strain relaxation (up to 81 %) at 12.5 at.% Sn concentration, translating into an increased separation between -and L-valleys of about 60 meV, have been obtained without crystalline structure degradation, as revealed by Rutherford backscattering/ion channeling spectroscopy and Transmission Electron Microscopy. Room temperature transmission/reflection and photoluminescence measurements were performed to probe the optical properties of these alloys. The emission/absorption limit of GeSn alloys can be extended up to 3.5 µm (0.35 eV), making those alloys ideal candidates for optoelectronics in the mid-infrared region. Theoretical net gain calculations indicate that large room temperature laser gains should be reachable even without additional doping.

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Section: Resultsmentioning

confidence: 99%

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

et al. 2015

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“…12 By using the deformation potential theory, an additional part Ĥ s , 12 which has a similar form as Ĥ k·p , can be added to take into account the effects of the strain. Figure 1 plots the energy dispersion of In 0.5 Ga 0.5 As bands ͑dotted lines͒ calculated by the eight-band k · p method.…”

Section: B Eight-band K · P Single-particle Statesmentioning

confidence: 99%

Multiband theory of multi-exciton complexes in self-assembled quantum dots

2005

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We report on a multiband microscopic theory of many-exciton complexes in self-assembled quantum dots. The single particle states are obtained by three methods: single-band effective-mass approximation, the multiband k · p method, and the tight-binding method. The electronic structure calculations are coupled with strain calculations via Bir-Pikus Hamiltonian. The many-body wave functions of N electrons and N valence holes are expanded in the basis of Slater determinants. The Coulomb matrix elements are evaluated using statically screened interaction for the three different sets of single particle states and the correlated N-exciton states are obtained by the configuration interaction method. The theory is applied to the excitonic recombination spectrum in InAs/GaAs self-assembled quantum dots. The results of the single-band effective-mass approximation are successfully compared with those obtained by using the of k · p and tight-binding methods.

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“…30,31 Since the layers of interest are relatively thick, tens of nm, size-quantization effects will not be prominent, and thus bulk properties were considered. The material parameters were taken as listed in Ref.…”

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Tensely strained GeSn alloys as optical gain media

Wirths¹,

Ikonić²,

Tiedemann³

et al. 2013

Applied Physics Letters

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This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well. The elastic strain within the GeSn well can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers. The optimum combination of tensile strain and Sn alloying soften the requirements upon indirect to direct bandgap transition. We theoretically discuss the strain-doping relation for maximum net gain in the GeSn active layer. Employing tensile strain of 0.5% enables reasonable high optical gain values for Ge 0.94 Sn 0.06 and even without any n-type doping for Ge 0.92 Sn 0.08 .

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Erratum: Eight-bandk⋅pmodel of strained zinc-blende crystals [Phys. Rev. B41, 11 992 (1990)]

Cited by 65 publications

References 0 publications

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

Multiband theory of multi-exciton complexes in self-assembled quantum dots

Tensely strained GeSn alloys as optical gain media

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