Erratum: ‘‘An analytical study of etch and etch-stop reactions for GaAs on AlGaAs in CCl2F2 plasma’’ [J. Appl. Phys. <b>6</b>
                  <b>1</b>, 2358 (1987)]

Seaward, K. L.; Moll, N.; Coulman, D.; Stickle, William F.

doi:10.1063/1.342040

Cited by 7 publications

(9 citation statements)

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“…These results are to be expected as the involatile species AlF 3 , which forms on AlN's surface in fluorinated chemistries, acts as a protective coating that inhibits etching. 24,25 …”

Section: Icp-rie Resultsmentioning

confidence: 99%

Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

Perros

Bosund

Sajavaara

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SFx+ and O+ chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF6 based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

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“…These results are to be expected as the involatile species AlF 3 , which forms on AlN's surface in fluorinated chemistries, acts as a protective coating that inhibits etching. 24,25 …”

Section: Icp-rie Resultsmentioning

confidence: 99%

Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

Perros

Bosund

Sajavaara

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…In the fabrication of microelectronic devices, substrates are commonly etched by plasma discharges or by ions beams via reactive ion etching (RIE) or chemically assisted ion beam etching (CAIBE). Because of the technological importance of these processes, many studies (only some of which are listed here) have looked at how ion beams and plasmas (32)(33)(34)(35)(36)(37), as well as the individual constituents of plasmas [e.g. ions , atoms (38)(39)(40)(41), radicals (26,(42)(43)(44)(45), hot molecules (46,47), electrons (48)(49)(50)(51)(52)(53)(54)(55), and photons (56)(57)(58)(59)(60)(61)(62)(63)(64)(65)(66)(67)(68)(69)], act to etch semiconductor substrates.…”

Section: Introductionmentioning

confidence: 99%

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Simpson

Yarmoff

1996

Annu. Rev. Phys. Chem.

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It is technologically important to understand how halogens react with semiconductor surfaces because halogen compounds are commonly used to etch semiconductor wafers in the microelectronics industry. Halogens are also model adsorbates for studying chemisorption on covalently bonded materials, such as semiconductors, owing to the simple nature of the bonds that they form. The growing use of III-V materials in the manufacture of optoelectronic devices has prompted investigations of the reactions of molecular halogens (XeF 2 , Cl 2 , Br 2 , and I 2 ) with III-V semiconductor surfaces (GaAs, GaSb, InP, InAs, and InSb). This review examines the more fundamental of these investigations, which involve model systems in ultra-high vacuum, focusing on the chemistry of the halogen surface reactions and the physical and electronic structure of the reacted surfaces.

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“…No gallium or gallium chloride was detected. Seaward et al 7 suggested that the low volatility of the gallium chlorides and their tendency to condense on surfaces prohibit detection with downstream mass spectrometry. It is also possible that strong neighboring peaks from etching the Si carrier wafer make them difficult to detect.…”

Section: Resultsmentioning

confidence: 99%

“…Use of mass spectrometry as an in situ diagnostic technique has previously been applied to monitor Si etched by reactive ion etching [1][2][3][4] ͑RIE͒ and III-V materials etched by RIE or reactive ion beam etching [5][6][7][8] ͑RIBE͒.…”

Section: Introductionmentioning

confidence: 99%

In situ monitoring of GaAs etched with a Cl2/Ar discharge in an electron cyclotron resonance source

Kahaian

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Erratum: ‘‘An analytical study of etch and etch-stop reactions for GaAs on AlGaAs in CCl2F2 plasma’’ [J. Appl. Phys. 6 1, 2358 (1987)]

Cited by 7 publications

References 0 publications

Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

In situ monitoring of GaAs etched with a Cl2/Ar discharge in an electron cyclotron resonance source

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