Erratum: “A study of current transport in (BaxSr1−x)Ti1+yO3+z thin-film capacitors containing a voltage-dependent interface state charge distribution” [J. Appl. Phys. 97, 114101 (2005)]

Electrical properties of (Ba,Sr)TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes

“…Models for field injection might yield such steep slopes due to the exponential field dependence, however, using parameters, which are considered reasonable at present, less steep slopes have been reported for the region of fields considered here, and there is only a qualitative agreement with recent modeling for a 82 nm thick BST film. 9 Additionally we observe some relaxations under current stress, which restrict the applicability as integrated capacitors, 50 and a rather large scatter of the data for different films in this high field region. These latter effects might be related to the forming and switching effects observed first for amorphous oxides 17,51 and which have more recently been shown to exhibit a reproducible switching behavior for doped crystalline films.…”

“…24 Due to this correction the crossover of the leakage curves is removed and the leakage currents rather merge to the high field behavior. Hence, the region of positive temperature coefficient of resistance, PTCR behavior, 9,58,59 can be understood and is removed by this scaling.…”

“…Nevertheless, the details on the dominating mechanism are under discussion: thermionic emission, field emission, tunneling, as well as the drift diffusion in the bulk. 9,16 All mechanisms can explain certain aspects, however, there is no quantitative description of the effect and its temperature dependence. Hence, inhomogeneous current distributions connected with extended defects ͑filament formation͒ should be considered, too.…”

“…More recently it has been recognized that the understanding of this dead layer is also important for the understanding of the leakage currents. [8][9][10][11] In a two-capacitor model the contributions of interfacial layers, i , and film, B , can be separated for thickness series of thin films. This model assumes a bulk region of thickness t and permittivity B , and the two interface regions with thickness t i , which yield two capacitors of a lower permittivity i .…”

Dielectric model of point charge defects in insulating paraelectric perovskites

“…2 In agile microwave devices (i.e., varactors, film bulk acoustic wave resonators, FBARs) based on paraelectric phase ferroelectrics, the oxygen vacancies cause high RF and DC leakages currents, microwave losses, 3 and distortion (hysteresis) of C-V, 4,5 tand-V, 6 and I-V (Ref. 7) dependencies. In memory applications the oxygen vacancies cause fatigue.…”