Errata: “Acid-based Etching of Silicon Wafers: Mass-Transfer and Kinetic Effects” [J. Electrochem. Soc., (147), 176]

Abstract

On page 176, Eq. 3 and the two sentences immediately following should read:µ ∝ e Ea µ /KT Since the viscosity is a transport property of the liquid, they claim that the temperaturen dependence of the viscosity can be a measure of the temperature dependence of mass-transfer rates. The argument can be valid in a limited context because the mass transfer rate decreases with increasing viscosity. However, the argument is not entirely valid because the mass-transfer coefficient is a function of many temperature dependent parameters other than viscosity.In addition, the descriptions of Fig. 4 and 6c given on pages 180 and 181, respectively, are in error. Correctly stated, they should be: Figure 4 shows the qualitiative dependence of the polishing efficiency (η pol ) on the ratio of the mass transfer resistance (R m,i ) to the kinetic resistance (R r,i ). The parameters (R m,i /R r,i ) and (R m,i /R r,i ) max , in general, should correspond to the same η pol . Figure 6c shows the qualitative dependence of the polishing efficiency on the ratio of the effective mass transfer resistance (Rm,eff,i) to the kinetic resistance (R r,i ). The parameters (R m,eff,i /R r,i ) and (R m,eff,i /R r,i ) max , in general, should correspond to the same η pol .

Preparation of Ultrathin Germanium on Insulator Films Using a Wet Etching Process

“…The polishing efficiency is related to mass-transfer resistance and kinetic resistance, which are determined by reaction mechanism, temperature and hydrodynamics. 21 Using dilute solution at low temperature may have high polishing efficiency which could explain the better uniformity observed in our experiments. As marked in Figure 2b, the maximum deviations increased slightly after each thinning step.…”

“…Spinning or rotating of the wafers may cause better surface morphology due to mass transport effect. 21 To verify the quality of the GOI thin films after etching, GOI wafers with a doping concentration of 10 18 cm −3 were used to fabricate JLTs. The wafers were thinned to 15 nm using the method described above.…”

Effect of acid‐based chemical polish etching on the performance of silicon heterojunction solar cells

“…2. This phenomenon can be well explained by mass-transfer etching theory [12]. In this theory, the mass-transfer resistance during etching is directly proportional to the thickness of mass transfer (d F ), hence the mass-transfer resistance at the peaks is lower than that of at valleys.…”

“…Figure 3 shows a schematic explanation for the smoothing of pyramids during CP etching. Thus, removal rate at peaks (v p ) is higher than that at valleys (v v ) [12], resulting in that the surface roughness reduces and φ increases. …”

“…Robbins and Schwartz published a series of papers about acid etching of Si [9][10][11]. They reported that when the etching rate is influenced by the autocatalytic oxidationreduction reaction, mass-transfer effects are significant [9,11], and then the etch rate at pyramid peaks is higher than that at valleys [12], thus the pyramid peaks become smooth.…”