Erbium Related Defects in Gallium Arsenide

Peaker, А. R.; Coppinger, F.; Efeoǧlu, Hasan; Evans–Freeman, J.H.; Maude, D.K.; Portal, J. C.; Rutter, P.; Singer, K. E.; Scholes, Amy; Wright, Adrian C.

doi:10.4028/www.scientific.net/msf.258-263.1551

Cited by 4 publications

(1 citation statement)

References 1 publication

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“…In this arrangement, the single band-to-band tunneling step is divided into two shorter tunneling steps, thereby achieving enhanced peak tunnel current density. However, ErAs is a semi-metal crystal with a rock-salt structure [13] and the crystal structure is quite different from zinc-blende, which is the crystal structure of the other composite layers commonly used in making multijunction solar cells. Due to this different crystal structure, ErAs can form anti-phase domain (APD) defects [14] which can greatly decrease the material quality.…”

Section: Introductionmentioning

confidence: 99%

Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application

Park

Kang

Ravindran

et al. 2015

Semicond. Sci. Technol.

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We report the performance enhancement of a molecular beam epitaxy grown GaAs tunnel diode embedded with InAs quantum dots (QDs) for tandem solar cell application, and characterization of tunnel diodes embedded with InAs QDs grown with different growth parameters. Prior to the growth and fabrication of the tunnel diode, InAs QDs were grown under different growth durations and temperatures. The InAs QD samples grown in a temperature range from 480 to 520 °C for a duration of 32 s showed the highest areal fill fraction by InAs QDs. Tunnel diodes embedded with InAs QDs that were grown at various growth conditions were fabricated and characterized. We found that the tunnel diode embedded with InAs QD grown at 520 °C showed the highest peak tunnel current density among all the samples. The enhanced performance of the InAs QD embedded tunnel diode is attributed to the large areal fill fraction produced by the presence of large InAs QDs having high density, which are formed at sufficiently high growth temperature and long growth duration.

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Section: Introductionmentioning

confidence: 99%

Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application

Park

Kang

Ravindran

et al. 2015

Semicond. Sci. Technol.

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Infrared photoluminescence from Er-doped a-GaAsN alloys

Zanatta

2000

Journal of Non-Crystalline Solids

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1540 nm light emission from Er-doped amorphous GaAsN films

Zanatta

1999

Applied Physics Letters

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Erbium-doped amorphous gallium–arsenic–nitrogen (a-GaAsN) films have been prepared by cosputtering from a crystalline GaAs wafer partially covered with metallic Er pieces. The films were deposited at room temperature under different partial pressures of Ar and N2. After deposition, the films were characterized by optical transmission in the visible-ultraviolet energy range, photoluminescence (PL) in the infrared region, and Raman scattering spectroscopy. Compositional measurements were also performed indicating an Er content of ∼0.5 at. % and a N concentration that scales with the N2 partial pressure during deposition. According to the experimental results, to higher N contents correspond larger optical band gaps and more intense Er3+-related PL signals. This dependence is analyzed in terms of the compositional, electronic, and structural characteristics of each film.

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Erbium Related Defects in Gallium Arsenide

Cited by 4 publications

References 1 publication

Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application

Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application

Infrared photoluminescence from Er-doped a-GaAsN alloys

1540 nm light emission from Er-doped amorphous GaAsN films

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