Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

Теруков, Е. И.; Gusev, O. B.; Kon’kov, O. I.; Undalov, Yu. K.; Stutzmann, M.; Janotta, A.; Mell, H.; Kleider, Jean‐Paul

doi:10.1134/1.1521223

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…In contrast, hydrogenation attempts were mostly unsuccessful in n-type SiC [12]. High density direct current plasma treatment [13] or high dose implantation [14] causes a decrease in the free carrier concentration due to the appearance of electron traps in n-type samples.…”

Section: Introductionmentioning

confidence: 99%

Boron and aluminium doping in SiC and its passivation by hydrogen

Deák

Aradi

Gali

2001

J. Phys.: Condens. Matter

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Extensive calculations regarding the formation energy of interstitial hydrogen and hydrogen-vacancy complexes in different charge states have been carried out using the local density approximation to ab initio density functional theory with a plane-wave basis and norm-conserving pseudopotentials on supercells of cubic (3C) SiC. Based on these results the hydrogen concentration of as-grown or H-plasma treated SiC is estimated and its effect on the net carrier concentration is given. Incorporation of B and Al in or without the presence of hydrogen has been investigated in hexagonal (4H) SiC supercells. The possible origins of the shallow and deep boron acceptors is discussed. It is found that the presence of boron promotes hydrogen incorporation during growth in the form of passive B + H complexes. The same is not true for Al. If Al + H complexes are formed (say, after H-plasma treatment), the structure of this complex is different from that of the B + H complexes. The calculated difference between the dissociation energies is 0.9 eV.

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Section: Introductionmentioning

confidence: 99%

Boron and aluminium doping in SiC and its passivation by hydrogen

Deák

Aradi

Gali

2001

J. Phys.: Condens. Matter

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“…In this paper we report on the preparation and room-temperature properties of such diodes. Preliminary results of this study were included in an earlier paper [9].…”

Section: Introductionmentioning

confidence: 96%

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Mell

Weiser

Теруков

et al. 2004

phys. stat. sol. (c)

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We have fabricated erbium-doped amorphous silicon p-i-n structures by conventional plasma decomposition of silane. The erbium doping was achieved by sublimation of the metal-organic compound tris(2,4-pentanedionato)-Er(III) which has a more favorable erbium-carbon ratio than previously used compounds. Since the Er centers introduce donors and defects in the amorphous silicon, counterdoping with diborane has been required to obtain the near-intrinsic i layers with a reduced defect density. The p-i-n junctions have excellent diode characteristics and exhibit, under forward bias, pronounced electroluminescence near 1.54 µm at room temperature. Their power efficiency is by two orders of magnitude larger than that of previously fabricated heterojunctions of amorphous and crystalline silicon. We discuss possible mechanisms of the Er 3+ excitation in our diodes.

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Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

Cited by 2 publications

References 3 publications

Boron and aluminium doping in SiC and its passivation by hydrogen

Boron and aluminium doping in SiC and its passivation by hydrogen

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

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