Erbium doping of molecular beam epitaxial GaAs

Smith, Robin S.; Müller, H.; Ennen, H.; Wennekers, P.; Maier, M.

doi:10.1063/1.98127

Cited by 75 publications

(16 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Erbium is of particular interest because it has a characteristic emission at 1.54pm which is near to the minimum absorption window of silica-based optical fibres. A wide variety of 1 2 experimental techniques, including liquid phase epitaxy (LPE)1, ion implantation2, metal or4ganic chemical vapour deposition (MOCVD) 3 and molecular beam epitaxy (MBE) 4 '., have been employed to incorporate erbium into the binary semiconductor gallium arsenide. For the latter technique, optimum growth conditions and erbium concentrations for maximum luminescence efficiency have been deduced 4 , but few structural studies have been undertaken.…”

Section: Introductionmentioning

confidence: 99%

“…A wide variety of 1 2 experimental techniques, including liquid phase epitaxy (LPE)1, ion implantation2, metal or4ganic chemical vapour deposition (MOCVD) 3 and molecular beam epitaxy (MBE) 4 '., have been employed to incorporate erbium into the binary semiconductor gallium arsenide. For the latter technique, optimum growth conditions and erbium concentrations for maximum luminescence efficiency have been deduced 4 , but few structural studies have been undertaken. Using MBE we have grown and undertaken detailed structural characterisation of gallium arsenide doped with erbium in the range 4 x 101 6 cm 3 to 2 x 1020 cm3.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Erbium Doped Gallium Arsenide a Self-Organising Low Dimensional System

Peaker¹,

Efeoǧlu²,

Langer

et al. 1993

MRS Proc.

View full text Add to dashboard Cite

The growth of erbium doped gallium arsenide by MBE at normal substrate temperatures (-580"C) is constrained by a solubility limit of 8x1 017 cm-3 . This is much less than is desirable for optical emitters using the forbidden 4f transitions of Er 3 + to produce radiation at 1.54pm. We have developed an MBE technique where it is possible to produce spherical mesoscopic precipitates containing erbium as a matrix element within the gallium arsenide. Structural and analytical studies indicate that the precipitate is cubic (rock salt) erbium arsenide. The physical size of the precipitates is self limiting as a result of surface migration occurring during MBE growth. By adjusting the growth conditions it is possible to produce an array of uniform erbium arsenide quantum dots of a size chosen from the range 10-20A. The dot density can be varied by changing the erbium flux.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Erbium Doped Gallium Arsenide a Self-Organising Low Dimensional System

Peaker¹,

Efeoǧlu²,

Langer

et al. 1993

MRS Proc.

View full text Add to dashboard Cite

show abstract

“…Much better quality samples of Er doped III-V semiconductors are grown by MOCVD [3,36] or MBE [37,38]. In a direct growth of doped layers all problems related to the post-implantation annealing are avoided.…”

Section: 3 Erbium In Gaasmentioning

confidence: 99%

“…Optical activity of Er disappeared entirely after the Er atoms had located in the lattice sites of GaAs. This effect may be associated either with the removal of defects activating photoluminescence of Er or with a change of bonding character between erbium or arsenic atoms, when the Er atoms tend to occupy tetrahedral lattice sites.Much better quality samples of Er doped III-V semiconductors are grown by MOCVD [3,36] or MBE [37,38]. In a direct growth of doped layers all problems related to the post-implantation annealing are avoided.…”

mentioning

confidence: 99%

Implantation of Rare-Earth Atoms into Si and III-V Compounds

1993

View full text Add to dashboard Cite

Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 10 18 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.PACS numbers: 61.80. Jh, Introductory remarksRecently we witness a burst of interest in the doping of Si and III-V compound semiconductors with rare earths (RE). The attention to these exotic dopants was attracted by their potential utilization in constuction of novel light emitting devices (LEDs). Rare earth doped semiconduction are expected to combine the well-known sharp, temperature stable, ultra narrow, atomic-like emission originating from the electronic transitions within the 4f shell of RE impurities with the efficient electrical pumping of this emission by electrons and holes. The inherently long lifetime of the 4f emission limits a possible light output from these devices to small power in a microwatt range. However, if RE doping of Si would result in the constuction of non-degrading efficient LEDs, even with a moderate quantum efficiency at room temperature, then this could lead to a real intrachip (59) 60A. Kozanecki' J.M. Langer' A.R. Peaker optical communication -a long awaited technological goal in the field of VLSI circuits [1,2].Rare earths are very often used as the light emitting centres in wide energy gap ionic crystals and glasses. In fact, most powerful solid state lasers are made of an Nd doped glass. REs are also often utilised in other solid state lasers. In all these cases high dopant concentration is achieved during the crystal or glass growth by adding required amounts of appropriate RE compound to the melt from which a laser rod is pulled out.In semiconductor devices, the active volume is much smaller and planar technologies dominate processing. Very low solubility of REs in covalent semiconduction narrows the range of available technologies of the growth of RE doped semiconduction to non-equilibrium techniques. Among them, two are feasible. One bases on metalloorganic chemical vapour deposition (MOCVD) -a standard technology for semiconductor growth. Initial problem of finding suitable RE compound which would crack in the MOCVD reactor seems to be finally resolved. This technology has been mastered particularly by the group of. K. Takahei [3]. Alternative technology, most suitable for Si doping with REs, is ion implantation, which will be the main topic of our review.Additional problem related to RE doping of Si and III-V compounds is caused by extremely high chemical activity of the RE elements, particularly their notorious affinity to oxygen and other group-VI elements. This can be turned into advantage, however, in the purification of the materials grown from the melt (i.e. liquid phase epitaxy) in the presence of REs [4]...

show abstract

“…Typically, the IR transitions seen from RE elements represent the lowest energy transition possible between 4f levels. Er incorporated into Si 2,3,4,5 or GaAs 6,7,8,9 has been the most commonly studied system, with its characteristic emission only well documented at infrared wavelengths.…”

Section: Introductionmentioning

confidence: 99%

Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE

et al. 1998

View full text Add to dashboard Cite

We report the morphological and compositional characteristics of Er-doped GaN grown by MBE on Si(111) substrates and their effect on optical properties. The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N 2 . The films emit by photoexcitation in the visible and near infrared wavelengths from the Er atomic levels. The morphology of the GaN:Er films was examined by AFM. Composition was determined by SIMS depth profiling that revealed a large Er concentration at 4.5×10 21 atoms/cm 3 accompanied by a high oxygen impurity concentration.

show abstract

Erbium doping of molecular beam epitaxial GaAs

Cited by 75 publications

References 9 publications

Erbium Doped Gallium Arsenide a Self-Organising Low Dimensional System

Erbium Doped Gallium Arsenide a Self-Organising Low Dimensional System

Implantation of Rare-Earth Atoms into Si and III-V Compounds

Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE

Contact Info

Product

Resources

About

Erbium doping of molecular beam epitaxial GaAs

Cited by 75 publications

References 9 publications

Erbium Doped Gallium Arsenide a Self-Organising Low Dimensional System

Erbium Doped Gallium Arsenide a Self-Organising Low Dimensional System

Implantation of Rare-Earth Atoms into Si and III-V Compounds

Optical and Structural Properties of Er3+-Doped GaN Grown by MBE

Contact Info

Product

Resources

About

Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE