MRS Proc. 1998 DOI: 10.1557/proc-537-g3.80 View full text
R. H. Birkhahn, R. Hudgins, D. S. Lee, B.K. Lee, A. J. Steckl, A. Saleh, R. G. Wilson, J. M. Zavada

Abstract: ABSTRACTWe report the morphological and compositional characteristics of Er-doped GaN grown by MBE on Si(111) substrates and their effect on optical properties. The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N 2 . The films emit by photoexcitation in the visible and near infrared wavelengths from the Er atomic levels. The morphology of the GaN:Er films was examined by AFM. Composition was determined by SIMS depth profiling that revealed a large Er c…

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