Er2O3 for high-gain waveguide amplifiers

Saini, Sajan; Chen, Kevin; Duan, Xili; Michel, Jürgen; Kimerling, Lionel C.; Lipson, Michal

doi:10.1007/s11664-004-0246-z

Cited by 40 publications

(20 citation statements)

References 9 publications

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“…9͒ but also from pure Er 2 O 3 as well. 16 In contrast, no such inhomogeneous broadening is observed from the Er 2 SiO 5 film investigated here as it consists of loose aggregate of high quality nanocrystal grains.…”

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confidence: 58%

“…On the other hand, it had been reported that upconversion in crystalline phase of erbium oxides is strongly reduced compared to that from silica due to the atomic-scale dispersion of Er. 16 The granular nature of the film can lead to strong scattering as well. Such scattering losses, however, can be alleviated by infiltrating the film with index-matched polymer, as had been shown for silica nanospheres.…”

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confidence: 99%

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Large-scale fabrication of single-phase Er2SiO5 nanocrystal aggregates using Si nanowires

Suh

Shin

Seo

et al. 2006

Applied Physics Letters

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Single-phase Er 2 SiO 5 nanocrystal aggregates were produced on a large scale using Si nanowire ͑Si-NW͒ arrays as templates. A dense array of Si-NWs was grown by vapor-liquid-solid mechanism using Au catalyst on Si ͑111͒ substrate. Afterwards, ErCl 3 ·6H 2 O dissolved ethanol solution was spin coated and annealed first at 900°C for 4 min in a flowing N 2 /O 2 environment and then at 1200°C in a flowing Ar environment for 3 min. X-ray diffraction, scanning electron microscope, and high-resolution transmission electron microscope measurements indicate that due to the use of Si-NWs, such a short annealing procedure is sufficient to completely transform the Er-coated Si-NWs into a thick, large-area aggregate of pure, single-phase to There is a strong and growing interest in developing Si photonics that can integrate the fast, lossless information carrying capacity of photonics with Si integrated circuit technology to overcome the impending "interconnect bottleneck." 1 In particular, a great effort has been made in developing a Si-based light source, especially a laser, that can overcome the inherent limitation of the indirect band gap of Si. 1,2 Among the many possible ways of obtaining light emission from Si, 3-5 using the rare earth ion Er 3+ as an optical dopant has attracted a special attention because of its ability to provide light at 1.5 m that is compatible not only with optical telecommunication but also with silicon-oninsulator based Si microphotonic devices. 5,6 Furthermore, Er doping has a history of proven success in providing optical gain and lasing when doped into silica fiber amplifiers. 7 The intra-4f transition of Er 3+ that gives rise to the 1.5 m luminescence is parity forbidden and occurs due to the effects of the crystal field surrounding Er 3+ ions. This leads to long luminescence lifetimes and, when doped into an amorphous host such as silica, large inhomogeneous broadening of the atomic luminescence peak that allow for low-noise, broadband amplification capability of EDFAs. Unfortunately, the same qualities can lead to severe limitations for its applicability for Si photonics that requires a large optical gain in a limited wavelength range from a micrometer-sized volume, since the combination of long luminescence lifetimes and a broad luminescence peak results in a low gain cross section at a particular wavelength. Increasing the gain requires a very high Er concentration, but the concentration of optically active Er that can be doped into a host material without clustering is limited, even for an amorphous host such as silica. 8,9 Another way of increasing the gain cross section per wavelength is reducing the inhomogeneous broadening of Er 3+ luminescence by using a crystalline host matrix, but even in that case, controlling the location of Er 3+ ions down to atomic levels is difficult. 10 A rather interesting alternative to Er doping that can overcome these difficulties is to raise the Er concentration so high that a stable, Er rich crystalline phase can form. In particular, crystalline ra...

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confidence: 58%

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confidence: 99%

Large-scale fabrication of single-phase Er2SiO5 nanocrystal aggregates using Si nanowires

Suh

Shin

Seo

et al. 2006

Applied Physics Letters

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“…9 Similarly, erbium oxide is under active consideration as a source of efficient room-temperature light emission. [10][11][12] Erbium oxide contains a much higher Er concentration ($10 , thus presenting an opportunity for a greater density of light emitting centers. This characteristic, when combined with the possibility for incorporation in new-generations of MOS devices, renders erbium oxide a top candidate for extensive research efforts.…”

Section: Introductionmentioning

confidence: 99%

“…13 Thin erbium oxide films can be prepared on Si wafers using various growth methods, such as molecular beam epitaxy, chemical vapor deposition, and ion/laser sputtering. 1,[10][11][12] Electron beam (e-beam) deposition is also a useful in this regard, owing to its simplicity and cost effectiveness. Accordingly, this report presents an investigation of the optical and structural properties of e-beam deposited Er thin films following post-deposition oxidation annealing.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

Kamineni

Moore

et al. 2012

Journal of Applied Physics

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Thermal oxidation effects on the structural, compositional, and optical properties of erbium films deposited on silicon via electron beam evaporation were analyzed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and spectroscopic ellipsometry. A gradual rise in oxidation temperature from 700 to 900 °C resulted in a transition from ErO- to Er2O3-rich phase. Additional increase in oxidation temperature above 1000°C led to the formation of erbium silicate due to further oxygen incorporation, as well as silicon out-diffusion from the substrate. A silicon oxide interfacial layer was also detected, with its thickness increasing with higher oxidation temperature. Additionally, film refractive index decreased, while its Tauc bandgap value increased from ∼5.2 eV to ∼6.4 eV, as the oxidation temperature was raised from 700 °C to above 900 °C. These transformations were accompanied by the appearance of an intense and broad absorption band below the optical gap. Thermal oxidation effects are discussed in the context of film structural characteristics and defect states.

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“…In these compounds Er is a major component, and therefore its concentration (about 10 22 cm -3 ) can be several orders of magnitude greater than those typically obtained by ion implantation, allowing access to a huge amount of emitting centers. Very few reports are present in literature that discuss the optical properties of Er 2 O 3 [19][20][21] and Er silicate. [22][23][24][25][26] In particular, in the case of Er silicate the few available reports refer to sys-tems synthesized by techniques hardly compatible with Si technology, such as the sol-gel method [22][23][24][25] or metal-organic molecular beam epitaxy.…”

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confidence: 99%

Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films

et al. 2007

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Currently, electrical interconnections based on metal lines represent the most important limitation on the performances of silicon-based microelectronic devices. The parasitic capacities generated at the metal/insulator/metal capacitors present in the complex multilevel metallization schemes actually used, the intrinsic resistivity of the metal lines, and the contact resistance at the metal/metal interfaces constitute the main contributions to the delay in the signal propagation. Recently, a reduction of the delay times was achieved by replacing the traditional metallization schemes based on Al and SiO 2 with new materials, such as copper-based alloys and low-dielectricconstant insulating layers, but as soon as the minimum feature size of the devices will be further reduced, the delay resulting from metal interconnections will again represent an unacceptable bottleneck for device performances.[1] A definitive solution to this problem could be the use of optical interconnections for the transfer of information inside a chip or for chip-to-chip communications. To develop this strategy, siliconcompatible materials and devices able to generate, guide, amplify, switch, modulate, and detect light are needed. Recent major breakthroughs in this field have been the observation of optical gain in Si nanocrystals, [2] the development of a Si Raman laser, [3] the realization of a high-speed Si electro-optic modulator, [4] and the observation of electroluminescence from ultrapure Si diodes [5] and Si nanocrystal field-effect transistors. [6] A primary requirement for the materials proposed for the above applications is compatibility with current Si technology. However, because Si is intrinsically unable to efficiently emit light, owing to its indirect bandgap, it is evident that the main limitation to the approach described above is the lack of an efficient silicon-based light source. Among the efforts of the scientific community to efficiently produce photons from silicon, the introduction of light-emitting impurities, such as erbium ions, has a leading role. A relevant advantage of this approach is that standard silicon technology can be used to introduce erbium as a dopant and to process the material. Furthermore, Er ions emit at 1.54 lm, which is a strategic wavelength for telecommunication because it corresponds to a minimum in the loss spectrum of the silica optical fibers. Incorporation of Er in crystalline silicon (c-Si) emerged as the first promising method to turn silicon into a luminescent material, [7] but doping concentration was limited (ca. 1 × 10 18 cm -3) by the low solid solubility of Er. A co-implantation of Er and O [8,9] allowed to limit Er segregation and precipitation, owing to the formation of Er-O complexes. However, at room temperature a relatively low luminescence efficiency was obtained as a result of the strong nonradiative processes competing with the radiative Er de-excitation in c-Si. More recently, it was shown that by using a SiO 2 matrix containing Er-doped Si nanoclusters, an intense room-t...

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Er2O3 for high-gain waveguide amplifiers

Cited by 40 publications

References 9 publications

Large-scale fabrication of single-phase Er2SiO5 nanocrystal aggregates using Si nanowires

Large-scale fabrication of single-phase Er2SiO5 nanocrystal aggregates using Si nanowires

Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films

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