Equivalent circuit modeling of static substrate thermal coupling using VCVS representation

Walkey, D.J.; Smy, T.; Dickson, R.G.; Brodsky, J.S.; Zweidinger, D.T.; Fox, R.M.

doi:10.1109/jssc.2002.801200

Cited by 44 publications

(27 citation statements)

References 20 publications

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“…Thermal effects are deeply related to the electrical performance and overall reliability of the device. In addition to self-heating, each device operating at high power level heats up neighboring devices (thermal coupling or inter-device heating effects [5][6][7]). These factors, in combination with an increased density of transistors on a given chip, can affect the performance of the overall circuit [8].…”

mentioning

confidence: 99%

Characterization of mutual heating inside a SiGe ring oscillator

Weis

Santorelli

Ghosh

et al. 2012

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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This paper reports on the electrical and thermal characterization of a state of the art SiGe ring oscillator (RO) with 2.2 ps gate delay fabricated in a Si/SiGe:C technology featuring f T and f max of ~300 GHz and ~400 GHz, respectively. The transistor model is verified through DC and RF characteristics taken from the same die as the circuit measurements. Excellent agreement between measurements and compact model simulation is shown. A simple method is presented that calculates the nonlinear circuit temperature rise in the local circuit area resulting from mutual heating of all active and passive components. Once taken into account the circuit temperature, the accuracy of circuit simulation is significantly improved.

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mentioning

confidence: 99%

Characterization of mutual heating inside a SiGe ring oscillator

Weis

Santorelli

Ghosh

et al. 2012

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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“…2 does not use any VCVS in its implementation. Although the reduction in complexity for n = 2 is not visible, it is quite significant for n = 5 which requires only 10 extra nodes in our model in contrast to 25 extra nodes in conventional approach [5] [6]. In case of discarding the thermal coupling and considering only the selfheating effect in a multi-finger transistor simulation (which is very much unlikely), our approach still uses 2n extra nodes whereas the conventional approach uses only n extra nodes since the nodes across the VCVS (with 0 V) will collapse.…”

Section: Model Formulation and Implementationmentioning

confidence: 86%

“…In case of n = 2, the problem is solved by using the four-node subcircuits as shown in Fig. 1, which is obtained following the state-of-the-art model described in [5] [6]. It is clear that the number of the circuit nodes increases as n 2 in such a model with n as the number of emitter-fingers in a transistor system.…”

Section: Model Formulation and Implementationmentioning

confidence: 99%

“…In section II, we discuss the model formulation along with a SPICE implementation strategy. In section III, we compare the results of our implemented model with the experimental data and compare the simulation time with that of the state-of-the-art model of [5]. Finally we conclude in section IV.…”

Section: Introductionmentioning

confidence: 98%

“…Some special application circuits, such as high power amplifiers [4], prefer to use multi-finger SiGe HBTs where thermal coupling cannot be ignored. Compact modeling of static self-heating and thermal coupling are elaborately discussed in [5][6] [7] where voltage controlled voltage sources (VCVS) are used to model the thermal coupling effects in a compact modeling environment. It was also observed that the number of circuit nodes increases as n 2 with n as the number of (fingers) heat sources in a (multi-finger) transistor system.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs

Balanethiram

Chakravorty

D'Esposito

et al. 2015

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM

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A computationally efficient model for static selfheating and thermal coupling in a multi-finger bipolar transistor is proposed. Compared to an existing state-of-the-art model, our model differs only in the implementation strategy keeping the physical basis intact. The formulated model is implemented in Verilog-A without using any voltage controlled voltage sources. Temperature dependence of the thermal resistances are considered within the framework of the model. The number of extra nodes in our model reduces to 2n from n 2 required in the stateof-the-art model with n as the number of emitter fingers in a transistor. The simulation results of our model are found to be identical with those of the state-of-the-art model demonstrating the capability of accurately considering the static self-heating and thermal coupling in a simple way. The model is found to accurately predict the measured data of a five-finger transistor. It is found that in high current operating regimes, our five finger transistor model simulates around 11% faster compared with the state-of-the-art model.

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An On-Chip Temperature Sensor for the Measurement of RF Power Dissipation and Thermal Gradients

Onabajo

Silva-Martínez

2012

Analog Circuit Design for Process Variation-Resilient Systems-on-a-Chip

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Equivalent circuit modeling of static substrate thermal coupling using VCVS representation

Cited by 44 publications

References 20 publications

Characterization of mutual heating inside a SiGe ring oscillator

Characterization of mutual heating inside a SiGe ring oscillator

Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs

An On-Chip Temperature Sensor for the Measurement of RF Power Dissipation and Thermal Gradients

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