Equivalence between thermal and room temperature UV light-modulated responses of gas sensors based on individual SnO2 nanowires

Prades, Joan Daniel; Jiménez-Díaz, R.; Hernández-Ramírez, Francisco; Barth, Sven; Cirera, A.; Romano‐Rodríguez, A.; Mathur, Sanjay; Morante, J.R.

doi:10.1016/j.snb.2009.04.070

Cited by 204 publications

(107 citation statements)

References 33 publications

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“…A parameter that influences the kinetics is the presence of light. It has been reported that the recovery properties of ZnO and SnO 2 sensors were improved remarkably by UV light irradiation [19][20][21]. Preliminary experiments show that the relaxation time under UV illumination in the ZnO FET decreases by orders of magnitude.…”

Section: Threshold Voltage Dynamicsmentioning

confidence: 95%

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Andringa

Vlietstra

Smits

et al. 2012

Sensors and Actuators B: Chemical

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Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors Andringa, Anne-Marije; Vlietstra, Nynke; Smits, Edsger C. P.; Spijkman, Mark-Jan; Gomes, Henrique L.; Klootwijk, Johan H.; Blom, Paul W. M.; de Leeuw, Dago M. Link to publication in University of Groningen/UMCG research database Citation for published version (APA): Andringa, A-M., Vlietstra, N., Smits, E. C. P., Spijkman, M-J., Gomes, H. L., Klootwijk, J. H., ... de Leeuw, D. M. (2012). Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors. Sensors and actuators b-Chemical, 171(27), 1172-1179. DOI: 10.1016/j.snb.2012 Copyright Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a stretched-exponential time dependence with thermally activated relaxation times. We find an activation energy of 0.1 eV for trapping and 1.2 eV for detrapping. The attempt-to-escape frequency and characteristic temperature have been determined as 1 Hz and 960 K for charge trapping and 10 11 Hz and 750 K for recovery, respectively. Thermally stimulated current measurements confirm the presence of trapped charge carriers with a trap depth of around 1 eV. The obtained functional dependence is used as input for an analytical model that predicts the sensor's temporal behavior. The model is experimentally verified and a real-time sensor has been developed. The perfect agreement between predicted and measured sensor response validates the methodology developed. The analytical description can be used to optimize the driving protocol. By adjusting the operating temperature and the duration of charging and resetting, the response time can be optimized and the sensitivity can be maximized for the desired partial NO 2 pressure window.

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Section: Threshold Voltage Dynamicsmentioning

confidence: 95%

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Andringa

Vlietstra

Smits

et al. 2012

Sensors and Actuators B: Chemical

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“…4 (c) [9]. Based on their study, the maximum gas response is obtained with photon flux, enough for desorbed oxygen to create new oxygen vacancies but not excessive to prevent large desorption of NO…”

Section: Operation Condition Optimization (Light Intensity and Tempermentioning

confidence: 99%

Recent Trends of Light-enhanced Metal Oxide Gas Sensors: Review

Cho¹,

Park²

2016

Journal of Sensor Science and Technology

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Recent light-enhanced metal oxide gas sensors are reviewed in this article. The basic mechanisms of a light-enhanced metal oxide gas sensor are discussed. Many literatures reveal that the standalone sensitivity and the response/recovery time enhancements enabled by the exposing light are not as high as the performance enhancement provided by external heating. Therefore, both optimal amount of external heating and exposed light intensity are necessary to increase the performance of these light-enhanced gas sensors. The development of highly light sensitive materials and structures is important to lower the overall power consumptions of the sensors.

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“…Moreover, high temperature operation could lead to the long-term reliability problem due to the growth of the oxide grain. A range of techniques such as doping of novel metals, [10][11][12] MEMS fabrication, 13 nanosensing materials, 14 application of electrostatic field, 15 and ultraviolet (UV) irradiation [16][17][18][19][20][21][22][23][24] have been developed to reduce the operating temperature. Of these techniques, UV irradiation has attracted increasing attention as a promising strategy.…”

Section: Introductionmentioning

confidence: 99%

“…Since Camagni et al's report on UV-enhanced semiconducting oxide sensors, 12 many researchers have reported that UV irradiation improved the sensing performances of semiconducting oxide gas sensors. [16][17][18][19][20][21][22][23] On the other hand, there is almost no report on the gas sensing properties of one-dimensional nanostructures functionalized with metal catalyst under UV illumination. This study examined the NO 2 gas sensing properties of networked Pt-functionalized Ga 2 O 3 nanorods at room temperature under UV illumination to see the possibility of the practical use of Ga 2 O 3 -based gas sensors at room temperature.…”

Section: Introductionmentioning

confidence: 99%

UV Enhanced NO₂Sensing Properties of Pt Functionalized Ga₂O₃Nanorods

An¹,

Park²,

Mun³

et al. 2013

Bulletin of the Korean Chemical Society

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Ga2O3 one-dimensional (1D) nanostructures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the Ga2O3 nanostructures functionalized with Pt to NO2 gas at room temperature under UV irradiation were examined. The diameters of the 1D nanostructures ranged from a few tens to a few hundreds of nanometers and the lengths ranged up to a few hundreds of micrometers. Pt nanoparticles with diameters of a few tens of nanometers were distributed around a Ga2O3 nanorod. The responses of the nanorods gas sensors fabricated from multiple networked Ga2O3 nanorods were improved 3-4 fold at NO2 concentrations ranging from 1 to 5 ppm by Pt functionalization. The Pt-functionalized Ga2O3 nanorod gas sensors showed a remarkably enhanced response at room temperature under ultraviolet (UV) light illumination. In addition, the mechanisms via which the gas sensing properties of Ga2O3 nanorods are enhanced by Pt functionalization and UV irradiation are discussed.

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Equivalence between thermal and room temperature UV light-modulated responses of gas sensors based on individual SnO2 nanowires

Cited by 204 publications

References 33 publications

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Recent Trends of Light-enhanced Metal Oxide Gas Sensors: Review

UV Enhanced NO₂Sensing Properties of Pt Functionalized Ga₂O₃Nanorods

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Equivalence between thermal and room temperature UV light-modulated responses of gas sensors based on individual SnO2 nanowires

Cited by 204 publications

References 33 publications

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Recent Trends of Light-enhanced Metal Oxide Gas Sensors: Review

UV Enhanced NO2Sensing Properties of Pt Functionalized Ga2O3Nanorods

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UV Enhanced NO₂Sensing Properties of Pt Functionalized Ga₂O₃Nanorods