Equilibrium shape of single-layer hexagonal boron nitride islands on iridium

Petrović, Marin; Hoegen, M. Horn‐von; Heringdorf, Frank-J. Meyer zu

doi:10.1038/s41598-019-56000-1

Cited by 6 publications

(12 citation statements)

References 40 publications

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“…Comparing the LEED insets of Figure a,b yields a noticeable reduction of moiré spot intensity at the higher dosing temperature and suggests that a smaller fraction of the surface is covered by hBN. This is supported by the triangular shape of the specular spot, which originates from the triangular shape of hBN islands that are smaller than the transfer width (∼50 nm) of the LEED instrument.…”

Section: Resultsmentioning

confidence: 83%

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Segregation-Enhanced Epitaxy of Borophene on Ir(111) by Thermal Decomposition of Borazine

et al. 2021

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Like other 2D materials, the boron-based borophene exhibits interesting structural and electronic properties. While borophene is typically prepared by molecular beam epitaxy, we report here on an alternative way of synthesizing large single-phase borophene domains by segregation-enhanced epitaxy. X-ray photoelectron spectroscopy shows that borazine dosing at 1100 °C onto Ir(111) yields a boron-rich surface without traces of nitrogen. At high temperatures, the borazine thermally decomposes, nitrogen desorbs, and boron diffuses into the substrate. Using time-of-flight secondary ion mass spectrometry, we show that during cooldown the subsurface boron segregates back to the surface where it forms borophene. In this case, electron diffraction reveals a (6 × 2) reconstructed borophene χ6-polymorph, and scanning tunneling spectroscopy suggests a Dirac-like behavior. Studying the kinetics of borophene formation in low energy electron microscopy shows that surface steps are bunched during the borophene formation, resulting in elongated and extended borophene domains with exceptional structural order.

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Section: Resultsmentioning

confidence: 83%

“…While we investigated the growth of hBN on Ir(111) with low energy electron microscopy (LEEM) before, , here we focus on the morphology of the borophene covered Ir(111) surface and the borophene formation kinetics. The results are summarized in Figure .…”

Section: Resultsmentioning

confidence: 99%

Segregation-Enhanced Epitaxy of Borophene on Ir(111) by Thermal Decomposition of Borazine

et al. 2021

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“…It is worth noting that the influences of surface steps on h-BN growth are not only observed on Cu, but also on Pd, Ir, Pt, Ru, Rh, etc. [14,[218][219][220][221] Controlling of the Number of Layers: While monolayer h-BN has been extensively used as growth templates, tunneling barriers, and atomic membranes, multilayer h-BN has a great demand for use as dielectric layers, dangling bond-free substrates, and strong membranes. [80] One of the first instances of multilayer h-BN (films of 5-50 nm) growth on Ni surfaces is reported by Shi et al [179] The h-BN film is grown in an atmospheric pressure CVD (APCVD) system, using polycrystalline Ni as a substrate and borazine vapor (B 3 N 3 H 6 ) carried out by N 2 gas flow as the precursor.…”

Section: Chemical Vapor Depositionmentioning

confidence: 99%

“…It is worth noting that the influences of surface steps on h‐BN growth are not only observed on Cu, but also on Pd, Ir, Pt, Ru, Rh, etc. [ 14,218–221 ]…”

Section: Synthesis Of H‐bnmentioning

confidence: 99%

Structure, Properties and Applications of Two‐Dimensional Hexagonal Boron Nitride

et al. 2021

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Hexagonal boron nitride (h-BN) has emerged as a strong candidate for twodimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of stateof-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.The ORCID identification number(s) for the author(s) of this article can be found under

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“…19 These results confirm that well-defined h-BN overlayers with high quality were synthesized similar to the reported h-BN/Ir(111) systems. 21,23 Although the similar h-BN structure and growth behavior by normal CVD had been revealed, 21 the growth dynamics were rarely clarified, especially the formation barrier and elementary steps, which need to be well addressed.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

An Ammonization-Based Transformation of Hexagonal Boron Nitride on Ir(111) from Surface to Near-Surface Regions

et al. 2021

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Epitaxial growth of thin films on solid substrates significantly depends on the surface structure, including outmost and near-surface reconstruction. Here, using in situ surface measurements, we show an ammonization-based hexagonal boron nitride (h-BN) transformation on the Ir(111) substrate, from surface to near-surface regions. Near-surface B dopants are driven to segregate onto the surface induced by N atoms from NH 3 dehydrogenation; thus, B species react with N species to form h-BN overlayers on the surface, i.e., the ammonization growth route. Further, growth dynamics in near-surface-dependent ammonization and normal chemical vapor deposition growth are systematically investigated. The activation energy of the former is 0.53 eV higher than the latter. The difference in growth barriers is attributed to the diffusion of B species from nearsurface to surface regions, causing the growth mechanism changes from reaction-limited aggregation to diffusion-limited aggregation. In addition, h-BN overlayers are converted into boron oxide (B 2 O 3 ) in an O 2 atmosphere and reverse back to h-BN by reacting with NH 3 on the surface; thus, a reversible structural transformation on the surface was achieved by successive oxidation and ammonization. This work gains a deep understanding of the h-BN conversion from surface to near-surface regions and provides valuable insights into their evolution dynamics.

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Equilibrium shape of single-layer hexagonal boron nitride islands on iridium

Cited by 6 publications

References 40 publications

Segregation-Enhanced Epitaxy of Borophene on Ir(111) by Thermal Decomposition of Borazine

Segregation-Enhanced Epitaxy of Borophene on Ir(111) by Thermal Decomposition of Borazine

Structure, Properties and Applications of Two‐Dimensional Hexagonal Boron Nitride

An Ammonization-Based Transformation of Hexagonal Boron Nitride on Ir(111) from Surface to Near-Surface Regions

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