Equilibria in systems condensed substance–gas

Belevantsev, V. I.; Ryzhikh, A. P.; Zherikova, Kseniya V.; Морозова, Н. Б.

doi:10.1007/s10973-013-3401-z

Cited by 1 publication

(1 citation statement)

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“…Saturated vapor pressure of compounds I-V was measured by a static tensimetry using a glass membrane manometer in the temperature range of 288-417 K. The uncertainty in the pressure and temperature measurements was 66 Pa and 0.5 K, respectively. The fundamentals of this method and experimental technique details are presented in [22,29,30]. Pressure measurements were recorded after reaching the equilibrium at a given temperature.…”

Section: Experimental Synthesismentioning

confidence: 99%

Thermal properties of some organosilicon precursors for chemical vapor deposition

Ermakova

Сысоев

Nikolaev

et al. 2016

J Therm Anal Calorim

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Five volatile organosilicon compounds: trimethyl (phenyl)silane Me 3 SiC 6 H 5 (I), trimethyl(cyclohexyl)silane Me 3 SiC 6 H 11 (II), trimethyl(phenoxy)silane Me 3 SiOC 6 H 5 (III), trimethyl(cyclohexyloxy)silane Me 3 SiOC 6 H 11 (IV), and trimethyl(allyloxy)silane Me 3 SiOC 3 H 5 (V) were synthesized, purified, and identified. Data of IR spectroscopy; gas-liquid chromatography; and 1 H NMR, 13 C NMR, 29 Si NMR analyses were used to identify and confirm the high purity of the compounds (more than 99.6 %). The thermal stability of the compounds was investigated by DTA-TG. The quantitative data on temperature dependences of the saturated vapor pressure of the compounds were obtained by static tensimetry method with glass membrane null manometer. The volatilities of compounds Me 3 SiOC 6 H 5 , Me 3 SiC 6 H 5 , Me 3 SiC 6 H 11 , Me 3 SiOC 6 H 11 were shown to be close due to the presence of large-size phenyl/cyclohexyl group. The replacement of phenyl/cyclohexyl group by allyl substituent in the molecule led to significant increase in volatility for Me 3 SiOC 3 H 5 in comparison with compounds mentioned before. The vapor pressure of all of the compounds is enough to use them as precursors in CVD processes without additional heating. The thermodynamic parameters (enthalpies and entropies) of vaporization processes for four compounds II-V were determined for the first time.

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Section: Experimental Synthesismentioning

confidence: 99%