EPR study of Si‐ and Ge‐related defects in HPHT diamonds synthesized from Mg‐based solvent‐catalysts

Nadolinny, V. A.; Komarovskikh, Andrey; Palyanov, Yuri N.; Kupriyanov, Igor N.; Borzdov, Yuri M.; Рахманова, М. И.; Yuryeva, O. P.; Veber, Sergey L.

doi:10.1002/pssa.201600211

Cited by 40 publications

(19 citation statements)

References 41 publications

(53 reference statements)

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“…The isotropic line with a g-factor of 2.032 was observed, and for the samples grown in the 61 Ni enriched system, the HFS of one 61 Ni atom was observed (W8 center). Based on the observations, the EPR signal could be attributed to point defects or nickel inclusions in diamond.…”

Section: Nickel-containing Centers In Diamondsmentioning

confidence: 93%

“…Only 20 years later, Isoya et al succeeded in growing diamond crystals of appropriate quality, and the EPR spectrum of the W8 center was analyzed [18]. The HFS of 61 Ni and four 13 C atoms were detected: A(Ni) = 0.65 mT, A || ( 13 C) = 1.339 mT, A ⊥ ( 13 C) = 0.340 mT, and the 13 C hyperfine tensor was axially symmetric about the [111] axis. The S = 3/2 spin state was determined by Fourier-transform nutational EPR spectroscopy.…”

Section: Nickel-containing Centers In Diamondsmentioning

confidence: 99%

“…Since boron is usually present in diamond as a trace impurity, the possibility of the formation of a silicon-boron defect was considered. The HPHT diamond crystals were synthesized in the Mg-C system, with the addition of various amounts of Si and B [61]. In the photoluminescence spectra of the samples, the intense 720 nm system was detected.…”

Section: Silicon-vacancy Defect In Diamondmentioning

confidence: 99%

“…The analysis of the angular dependence of the EPR spectrum showed that it was characterized by an axial symmetry around <111> and had the following spin-Hamiltonian parameters: S = 1, g|| = 2.0025, g⊥ = 2.0027, D = 80.3 mT, E = 0 [61]. As shown previously, several models can be proposed for a defect with a trigonal symmetry around <111> For the newly observed center, the germanium split-vacancy model is more preferred because of the large atomic radius of germanium.…”

Section: Germanium-vacancy Defect In Diamondmentioning

confidence: 99%

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Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

2017

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Diamond is a unique mineral widely used in diverse fields due to its remarkable properties. The development of synthesis technology made it possible to create diamond-based semiconductor devices. In addition, doped diamond can be used as single photon emitters in various luminescence applications. Different properties are the result of the presence of impurities or intrinsic defects in diamond. Thus, the investigation of the defect formation process is of particular interest. Although hydrogen, nitrogen, and boron have been known to form different point defects, the possibility for large impurity atoms to incorporate into the diamond crystal structure has been questioned for a long time. In the current paper, the paramagnetic nickel split-vacancy defect in diamond is described, and the further investigation of nickel-, cobalt-, titanium-, phosphorus-, silicon-, and germanium-related defects is discussed.

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Section: Nickel-containing Centers In Diamondsmentioning

confidence: 93%

Section: Nickel-containing Centers In Diamondsmentioning

confidence: 99%

Section: Silicon-vacancy Defect In Diamondmentioning

confidence: 99%

Section: Germanium-vacancy Defect In Diamondmentioning

confidence: 99%

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Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

2017

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“…2a). Still, according to electronic paramagnetic resonance measurements, the trigonal symmetry of the center is retained [8,9]. Oscillation of the heavy impurity Ge atom gives rise to LVM in the diamond phonon spectrum which is observed ≈ 45 meV apart from the strongest component of ZPL line in the fluorescence sideband of this center (see Fig.…”

Section: Receivedmentioning

confidence: 95%

Isotopic effects in impurityvacancy complexes in diamond

Екимов¹,

Кривобок²,

Lyapin³

et al. 2018

Nanosystems: Phys. Chem. Math.

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We consider isotopic effects on the photoluminescence of recently discovered germanium-vacancy (GeV − ) color center in diamond produced by the high-pressure high-temperature (HPHT) treatment. It was demonstrated that the influence of isotopic composition on the position of zero-phonon line (ZPL) and its first vibronic peak (local vibrational mode, LVM) provides valuable information on the electronic and structural properties of this center.Keywords: diamond, defects, color centers, split-vacancy, high pressures. : 19 June 2017. Revised: 15 December 2017 Investigation of isotopic effects on the photoluminescence of split-vacancy centers in diamond allows one to obtain deeper insight into their electronic, structural and optical properties. Due to the bright and almost monochromatic luminescence, the two already-known representatives of these class of defects SiV and recently discovered GeV [1][2][3][4] are considered as possible candidates for single-phonon emitters in quantum communications or photoluminescence markers in biomedical applications. Although the attractiveness of these centers is mostly caused by the large Debye-Waller factor (the intensity of the ZPL relative to the overall intensity of the center emission), the study of the luminescence sideband is still very informative. ReceivedIn this paper, we discuss only negatively charged GeV center which was produced in nano-and microdiamonds by HPHT synthesis from organic substances [4,5]. This split-vacancy complex consists of impurity atoms located almost midway between two vacant cites. Ideally the symmetry of the center is 3m. However, due to the incompletely filled doubly degenerate impurity electron level in the diamond band gap, this structure is Jahn-Teller unstable and the degeneracy should be lifted. Thus, the actual symmetry of the center should be lower. It is believed that the physical mechanism, which lifts this degeneracy in split-vacancy centers is caused by the spinorbit coupling [4,6,7]. Thus, the fluorescence line caused by the promotion of an electron from the lower e u level to this incompletely filled e g one (with separation energy of about 2.059 eV), is split into quadruplet Z 1−4 with two characteristic splitting energies 0.2 and 1.1 THz (corresponding to the energy difference in e g and e u levels respectively). This splitting is clearly seen in Fig. 1a-b) and Fig. 2a). Still, according to electronic paramagnetic resonance measurements, the trigonal symmetry of the center is retained [8,9]. Oscillation of the heavy impurity Ge atom gives rise to LVM in the diamond phonon spectrum which is observed ≈ 45 meV apart from the strongest component of ZPL line in the fluorescence sideband of this center (see Fig. 1a-b). Both the absolute energy of the strongest component of ZPL (Z 1 ) and relative energy of LVM (L 1 ) almost linearly depends on the isotope number of Ge atom m (see Fig. 1c). In the harmonic approximation, the LVM energy scales as a square root of the mass of oscillating atom but due to the small relative range δm = m − ...

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Near‐Infrared Fluorescence from Silicon‐ and Nickel‐Based Color Centers in High‐Pressure High‐Temperature Diamond Micro‐ and Nanoparticles

Shames

Dalis²,

Greentree

et al. 2020

Advanced Optical Materials

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Fluorescent color centers in diamond are invaluable room temperature quantum systems in fundamental scientific studies and vital for many emerging applications from inertial navigation to quantum sensing in biology. Yet, controlled production of specific color centers in synthetic diamond at scale remains challenging. Characteristics of silicon‐ and nickel‐based defects with strong fluorescence in the 700–950 nm spectral region formed in Si‐ and Ni‐doped diamond, created via high‐pressure high‐temperature synthesis in commercial quantities without irradiation, are reported. Using electron paramagnetic resonance spectroscopy and fluorescence spectroscopy, the presence of defects including the negatively charged silicon‐vacancy (SiV−), silicon‐boron (SiB) and positively charged substitutional nickel center (Nis+) in micrometer‐sized particles is identified and quantified. The color centers’ optical properties are investigated via time‐resolved and steady‐state fluorescence spectroscopy below 10 K and at room temperature. In ensemble measurements, the particles show no detectable signals from nitrogen‐vacancy (NV−) defects. The particles’ relative fluorescence brightness is quantified and compared to particles containing ≈1 ppm NV− centers. It is demonstrated that the Nis+ center fluorescence characteristics are preserved in 50 nm nanoparticles. The work paves the way for the use of fluorescent nanodiamonds in the first near‐infrared biological window between 700 nm and 950 nm in biomedical applications.

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EPR study of Si‐ and Ge‐related defects in HPHT diamonds synthesized from Mg‐based solvent‐catalysts

Cited by 40 publications

References 41 publications

Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

Isotopic effects in impurityvacancy complexes in diamond

Near‐Infrared Fluorescence from Silicon‐ and Nickel‐Based Color Centers in High‐Pressure High‐Temperature Diamond Micro‐ and Nanoparticles

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