Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

Nadolinny, V. A.; Komarovskikh, Andrey; Palyanov, Yuri N.

doi:10.3390/cryst7080237

Cited by 50 publications

(52 citation statements)

References 61 publications

(122 reference statements)

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“…Diamond may also be intentionally doped with silicon by introducing silane into the plasma, and careful studies have revealed many other silicon‐related spectral lines . Natural growth conditions do not favor the incorporation of larger atoms such as silicon into the compact diamond lattice . However, the presence of silicon alone is not sufficient to rule out that the diamond is not of natural origin.…”

Section: Discussionmentioning

confidence: 99%

“…[9,12] Natural growth conditions do not favor the incorporation of larger atoms such as silicon into the compact diamond lattice. [14] However, the presence of silicon alone is not sufficient to rule out that the diamond is not of natural origin. A very small number of natural diamonds containing the (Si-V) À center have been previously reported by Breeding and Wang.…”

Section: Discussionmentioning

confidence: 99%

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Anomalous Green Luminescent Properties in CVD Synthetic Diamonds

Wassell

McGuinness²,

Hodges

et al. 2018

Physica Status Solidi (a)

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In this paper, the authors explore the spectral properties of a sharp emission line centered at 499.6 nm (reported previously as 499 nm) observed in the UV‐luminescence spectrum of synthetic CVD diamond gemstones. These gemstones also exhibit spectrally prompt broad blue luminescence centered at 435 nm which is similar in character to the 425 nm blue luminescence characteristic of type IIa natural diamonds. By comparing the results against synthetic CVD diamond material which has been subjected to high temperature anneals, the authors can speculate on the nature of the defect associated with this color center. Since the 499 nm spectral line has only been observed in synthetic CVD diamonds to date, the authors further propose that it can be helpful in the identification of synthetic diamonds, in particular those showing the blue luminescence signature usually associated with type IIa natural diamonds.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Anomalous Green Luminescent Properties in CVD Synthetic Diamonds

Wassell

McGuinness²,

Hodges

et al. 2018

Physica Status Solidi (a)

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“…We introduced large Sn atoms in the diamond lattice and obtained the SnV centers with a large level splitting in the ground state. Incorporation of a heavier atom than those reported in previous studies [33] in diamond will become more important from the viewpoints of material science and quantum optics. The incorporation of large atoms such as Eu [34] and Xe [35] has been demonstrated so far.…”

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confidence: 87%

Tin-Vacancy Quantum Emitters in Diamond

et al. 2017

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Tin-vacancy (SnV) color centers were created in diamond by ion implantation and subsequent high temperature annealing up to 2100 °C at 7.7 GPa. The first-principles calculation suggests that the large atom of tin can be incorporated into the diamond lattice with a split-vacancy configuration, in which a tin atom sits on an interstitial site with two neighboring vacancies. The SnV center shows a sharp zero phonon line at 619 nm at room temperature. This line splits into four peaks at cryogenic temperatures with a larger ground state splitting of ~850 GHz than those of color centers based on other IV group elements, silicon-vacancy (SiV) and germanium vacancy (GeV) centers. The excited state lifetime was estimated to be ~5 ns by Hanbury Brown-Twiss interferometry measurements on single SnV quantum emitters. The order of the experimentally obtained optical transition energies comparing with the SiV and GeV centers is good agreement with the theoretical calculations.Point defect-related color centers in solid state materials are a promising approach for quantum information processing [1,2]. Nitrogen-vacancy (NV) centers in diamond have been most intensively studied from the viewpoint of both fundamental and applied sciences [3,4]. However, the zero phonon line (ZPL) of the NV center possesses a fraction of only 4 % in its total fluorescence due to its large phonon sideband (PSB). Also, the NV center suffers from external noise, leading to instability of the optical transition energy. To overcome these drawbacks, color centers based on IV group elements, silicon-vacancy (SiV) [5][6][7] and germanium-vacancy (GeV) [8][9][10][11] centers, has attracted attention owing to their large ZPL, structural symmetry robust against the external noise, and availability of quantum emission by single centers. Recently, spin control and evaluation of spin coherence time have been investigated for this two color centers [12][13][14][15][16], revealing that their spin coherence times were limited to sub-microseconds even at cryogenic temperatures < 5 K, much shorter than that of the NV center [17,18]. This limitation originates from phonon-mediated transitions between the lower and upper branches in the ground state [13][14][15][16]. Further cooling down to the sub-Kelvin regime or strain engineering is considered as a solution [15,16]. Another possibility is creation of a novel color center possessing a larger energy splitting in the ground state.For this purpose, in this study, we investigated the utilization of a IV group atom of tin (Sn, Fig. 1a).The incorporation of such a heavy atom into the diamond lattice as a form of a color center, especially single quantum emitter, has not been demonstrated yet. Here, we fabricated tin-vacancy (SnV) centers in diamond in both ensemble and single states by combination of ion implantation and subsequent high temperature annealing up to 2100 °C under a high pressure of 7.7 GPa. Low temperature optical measurements revealed that the ground state splitting of the SnV center was much larg...

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“…The content of larger atoms (Si, Ti, Ni, Ge, and P) in the diamond lattice is less than 0.01%. They form dopant-vacancy complexes with different luminescent characteristics [3,4]. As a rule, substituting atoms slightly increases the diamond unit cell parameter.…”

Section: Introductionmentioning

confidence: 99%

Heavily Boron Doped Diamond Powder: Synthesis and Rietveld Refinement

Зибров

Филоненко

2018

Crystals

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Boron-doped diamonds were synthesized by the reaction of an amorphous globular carbon powder (80%) with a powder of 1,7-di (oxymethyl)-M-carborane (20%) in a 'toroid'-type high-pressure chamber at a pressure of 8.0 GPa and temperature of 1700 • C. The structure was refined by the Rietveld method according to the X-ray powder diffraction data. It was shown that the unit cell parameters of these diamonds have two discrete quantities: around 3.570 Å for small concentrations of B (~1-1.5%) and around 3.578 Å for large concentrations of B (~2-3%). The concentration of the vacancies in the diamonds exceeds the concentration of boron atoms by 2-3 fold. This fact can play an important role in the formation of the structure and in determining the physical properties of diamonds.

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Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

Cited by 50 publications

References 61 publications

Anomalous Green Luminescent Properties in CVD Synthetic Diamonds

Anomalous Green Luminescent Properties in CVD Synthetic Diamonds

Tin-Vacancy Quantum Emitters in Diamond

Heavily Boron Doped Diamond Powder: Synthesis and Rietveld Refinement

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