2010
DOI: 10.1016/j.jnoncrysol.2010.07.022
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EPR of γ-induced paramagnetic centers in tellurite glasses

Abstract: Intrinsic paramagnetic responses were observed in the 60TeO 2 -25ZnO-15Na 2 O and 85TeO 2 -15Na 2 O mol% glasses, after γ-irradiation at room temperature: (1) a shoulder at g 1 = g ∥ = 2.02 ± 0.01 and an estimated g ⊥~2 .0 attributed to tellurium-oxygen hole center (TeOHC); (2) a narrow resonance at g 2 = 1.9960 ± 0.0005 related to the modifiers and (3) a resolved resonance at g 3 = 1.9700 ± 0.0005 ascribed to a tellurium electron center (TeEC) of an electron trapped at an oxygen vacancy (V O + ) in a telluriu… Show more

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Cited by 11 publications
(8 citation statements)
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References 19 publications
(24 reference statements)
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“…Literature sources give some results of the defects studying by using electron paramagnetic resonance (EPR) (Giehl et al, 2010;Ramana et al, 1989;Lagomacini et al, 2011) and spectra of optical absorption in γ-irradiated glasses (Singh et al, 2008;Xia et al, 2005;Shpotyuk et al, 2005). However, there are only a few works devoted to the influence of γ-irradiation on creation of defects that make a considerable effect on spectralluminescent properties of semiconductor materials doped with erbium.…”
Section: Introductionmentioning
confidence: 99%
“…Literature sources give some results of the defects studying by using electron paramagnetic resonance (EPR) (Giehl et al, 2010;Ramana et al, 1989;Lagomacini et al, 2011) and spectra of optical absorption in γ-irradiated glasses (Singh et al, 2008;Xia et al, 2005;Shpotyuk et al, 2005). However, there are only a few works devoted to the influence of γ-irradiation on creation of defects that make a considerable effect on spectralluminescent properties of semiconductor materials doped with erbium.…”
Section: Introductionmentioning
confidence: 99%
“…4). A better understanding of the thermal behavior of the defect states in the tellurite glass was obtained from a recent EPR study of the isochronal thermal decay of the g 1 , g 2 and g 3 resonances recently attributed by Giehl et al [11] to the tellurium oxygen hole center (TeOHC), to the non-bridging oxygen hole center (NBOHC), and to the tellurium electron center (TeEC), respectively as it is shown in Fig. 5.…”
Section: Resultsmentioning
confidence: 99%
“…Previous studies reported that NBO not only exhibits higher polarizability than BO but also binds excited electronsmore loosely than BO; as such, NBO requires lower energy to induce electron excitation than BO, resultingi nadecrease in E opt witha n increase in NBO [38,71]. In amorphous systems, E u is used to characterize the degree of disorder, which may be due to oxygen vacancies as aresult of volatilization loss of oxygen duringg lass melting or other types of defects originating from the presence of NBO [72,73]. In amorphous systems, E u is used to characterize the degree of disorder, which may be due to oxygen vacancies as aresult of volatilization loss of oxygen duringg lass melting or other types of defects originating from the presence of NBO [72,73].…”
Section: Discussionmentioning
confidence: 99%