2015
DOI: 10.1016/j.radphyschem.2015.06.019
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EPR of γ-induced defects and their effects on the photoluminescence in the glasses of the Ag0.05Ga0.05Ge0.95S2–Er2S3 system

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Cited by 17 publications
(7 citation statements)
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“…Clearly, not only PL intensity increases with erbium content but also does the effective width of the emission band. Additionally, the Δλ eff values for the excitation at 800 nm is higher for these glasses than for the 980 nm excitation [11].…”
Section: Resultsmentioning
confidence: 84%
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“…Clearly, not only PL intensity increases with erbium content but also does the effective width of the emission band. Additionally, the Δλ eff values for the excitation at 800 nm is higher for these glasses than for the 980 nm excitation [11].…”
Section: Resultsmentioning
confidence: 84%
“…Such processes are typical of erbium ions which are involved in the formation of clusters [12]. It was established in our previous work [5] that clusters of up to 10 3 erbium ions form in the Ag 0.05 Ga 0.05 Ge 0.95 S 2 -Er 2 S 3 glasses.…”
Section: Resultsmentioning
confidence: 97%
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“…This is because erbium ions in glasses may occupy several positions, and each may provide photoluminescent radiation. Also, γ-irradiation of the glasses [17] changes the mechanism of the luminescence emission. Whereas, no significant changes in the luminescence spectra were found after γ-irradiation of the (Ga 54.59 In 44.66 Er 0.75 ) 2 S 300 single crystal, which determines its advantage in radiation resistance for the possible applications in optoelectronics.…”
Section: Photoluminescencementioning
confidence: 99%