EPR of a defect in CVD diamond involving both silicon and hydrogen that shows preferential alignment

D’Haenens-Johansson, Ulrika F. S.; Edmonds, Andrew M.; Newton, Mark E.; Goss, Jonathan P.; Briddon, P.R.; Baker, J M; Martineau, P. M.; Khan, R. U. A.; Twitchen, Daniel J.; Williams, Stephanie D

doi:10.1103/physrevb.82.155205

Cited by 38 publications

(24 citation statements)

References 51 publications

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“…The features observed at 1.447 ± 0.001 eV and 1.493 ± 0.002 eV have previously been reported in siliconcontaining diamond. 22,35 The intensities of these features were found to correlate with the intensity of the 1.31 eV peak by In the absorption spectrum the peaks at 1.447 ± 0.001 eV and 1.493 ± 0.002 eV related to the photoconductivity threshold at 1.5 eV are visible. 35 The photoconductivity produces a rise in absorption which partially obscures the vibronic band of the 1.310 ± 0.001 eV feature.…”

Section: A Optical Absorption and Plmentioning

confidence: 93%

“…Similarly, other trigonal silicon-vacancy-type defects would be expected to show preferential alignment in diamonds grown on {110}-oriented substrates. 22 A consequence of this process is that all the (Si-V) 0 centers are expected to be preferentially oriented. The fact that only ∼ 80% of the (Si-V) 0 centers are preferentially oriented out of the growth plane is probably due to the sample studied containing material that was not only the result of growth on a flat {110} surface.…”

Section: B Preferential Alignment Of (Si-v)mentioning

confidence: 99%

“…Some of the data points are from samples treated (UV photoexcitation or heating in the dark) to change the relative concentration of (Si-V) 0 and (Si-V) − . 22 The graph also includes data from samples where EPR measurements indicated that the (Si-V) 0 defects were not randomly oriented. The analysis required to correct for the preferential alignment is discussed in Sec.…”

Section: B Eprmentioning

confidence: 99%

“…From the linear correlation between the (Si-V) 0 concentration and the integrated intensity of the absorption coefficient for the 1.31 eV band (Fig. 7) a calibration constant could be calculated, 22 giving…”

Section: Charge Transfer Between 131 Ev and 168 Ev Bandsmentioning

confidence: 99%

“…The ZPL at 1.31 eV (946 nm) has been previously attributed to (Si-V) 0 via a combination of EPR and optical absorption data. 22 Additionally, charge transfer was induced between the (Si-V) − and (Si-V) 0 centers, enabling the calculation of calibration factors which can be used to determine the concentration of the centers from the integrated absorption coefficients of the ZPLs at 77 K. 22 In this paper the optical properties of the 1.31 eV band are investigated in detail and new data are presented supporting the assignment to the (Si-V) 0 center. Studies of the production of both the 1.68 eV and 1.31 eV bands by irradiation and annealing is modeled in terms of vacancy capture by substitutional silicon.…”

Section: Introductionmentioning

confidence: 98%

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Optical properties of the neutral silicon split-vacancy center in diamond

et al. 2011

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The zero-phonon line (ZPL) at 1.68 eV has been attributed to the negatively charged silicon split-vacancy center in diamond, (Si-V) − , and has been extensively characterized in the literature. Computational studies have predicted the existence of the neutral charge state of the center, (Si-V) 0 , and it has been experimentally observed using electron paramagnetic resonance (EPR). However, the optical spectrum associated with (Si-V) 0 has not yet been conclusively identified. In this paper the 1.31 eV band visible in luminescence and absorption is attributed to (Si-V) 0 using an approach which combines optical absorption and EPR measurements. The intensities of both 1.68 eV and 1.31 eV bands are found to increase in deliberately Si-doped chemical vapor deposition (CVD) grown diamond, and also after electron irradiation and annealing, suggesting the involvement of both Si and a vacancy in the centers. The 1.31 eV ZPL is unambiguously associated to Si by its shift to a lower energy when the dominant Si isotope is changed from 28 Si to 29 Si. Charge transfer between (Si-V) − and (Si-V) 0 induced via ultraviolet photoexcitation or heating in the dark allows calibration factors relating the integrated absorption coefficient of their respective ZPLs to the defect concentration to be determined. Preferential orientation of (Si-V) 0 centers in CVD diamond grown on {110}-oriented diamond substrates is observed by EPR. The (Si-V) 0 centers are shown to grow predominantly into CVD diamond as complete units, rather than by the migration of mobile vacancies to substitutional Si (Si S ) atoms. Corrections for the preferential alignment of trigonal centers for quantitative analysis of optical spectra are proposed and the effect is used to reveal that the 1.31 eV ZPL arises from a transition between the 3 A 2g ground state and 3 A 1u excited state of (Si-V) 0 . A simple rate equation model explains the production of (Si-V) 0 upon irradiation and annealing of Si-doped CVD diamond. In as-grown Si-doped diamond the (Si-V) defects only account for a fraction of the total silicon present; the majority being incorporated as Si S . The data show that both Si S and (Si-V) are effective traps for mobile vacancies.

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Section: A Optical Absorption and Plmentioning

confidence: 93%

Section: B Preferential Alignment Of (Si-v)mentioning

confidence: 99%

Section: B Eprmentioning

confidence: 99%

Section: Charge Transfer Between 131 Ev and 168 Ev Bandsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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Optical properties of the neutral silicon split-vacancy center in diamond

et al. 2011

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Quantum Optical Diamond Technologies

Neumann

Wrachtrup

2013

Optical Engineering of Diamond

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Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane

Bolshakov

Ralchenko

Седов

et al. 2015

Physica Status Solidi (a)

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Homoepitaxial single crystal diamond layers with bright photoluminescence (PL) of silicon-vacancy (SiV) color centers at 738 nm wavelength have been grown on (100) diamond substrates by a microwave plasma CVD using a controlled Si doping via adding silane to CH 4 -H 2 reaction gas mixture in the course of the deposition process. In the range of the silane concentrations SiH 4 /CH 4 explored, from 0 to 2.4%, the SiV PL intensity shows a nonmonotonic behavior with silane addition, with a maximum at 0.6%SiH 4 /CH 4 , and a rapid PL quenching at higher Si doping. The maximum SiV concentration of %450 ppb in the samples has been determined from optical absorption spectra. It is found that the SiV PL intensity can strongly, an order of magnitude, increase within non-epitaxial inclusions in single crystal diamond film.

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EPR of a defect in CVD diamond involving both silicon and hydrogen that shows preferential alignment

Cited by 38 publications

References 51 publications

Optical properties of the neutral silicon split-vacancy center in diamond

Optical properties of the neutral silicon split-vacancy center in diamond

Quantum Optical Diamond Technologies

Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane

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