EPL performance in 65-nm node metallization technology and beyond

Koba, Fumihiro; Tsuchida, Takahiro; Sakaue, Hiroshi; Koike, Kyohei; Yamamoto, Jiro; Iriki, Nobuyuki; Yamashita, Hiroshi; Kageyama, S.; Nasuno, T.; Soda, E.; Takeda, Kenta; Kobayashi, Hideo; Shoji, Fumiya; Okamura, Hitoshi; Matsubara, Y.; Arimoto, Hiroshi

doi:10.1117/12.599257

Cited by 3 publications

(4 citation statements)

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“…6) An acid in the resist might be neutralized by the amine. We could then improve the resist profile by applying BARC between the resist and the low-k film 3) [Fig. 1(c)].…”

Section: Results and Discussion 221 Improvement By Barcmentioning

confidence: 99%

“…These deteriorations in the overlay accuracies were mainly caused by the electron-beam charging. 2,3,7,8) During the electron-beam exposure, insulating resist materials trapped charges and delayed its bleed-off through the underlying low-k insulation film. The trapped charges deflected the path of the electron-beam and resulted in the deterioration of overlay accuracies.…”

Section: Overlay Accuracy Improvement By Ecfmentioning

confidence: 99%

“…On the other hand, the application of ECF on top of resist eliminated the electron beam charging and the overlay accuracies were considerably improved. 2,3) With ECF, the 3-sigma overlay accuracies were measured to be 32.0 and 33.5 nm along the X and Y directions. And, we also confirmed that 3-sigma overlay accuracy was about 30 nm regardless of the presence of ECF, when the resist was on a silicon substrate.…”

Section: Overlay Accuracy Improvement By Ecfmentioning

confidence: 99%

“…EPL application for device fabrication has been one of the major thrusts in our program. 2,3) EPL operating at 100 kV electron beam gives high resolution as well has large process window associated with large depth of focus (DOF). Therefore EPL is an effective tool for high resolution application especially for hole-layers such as via and contact layers.…”

Section: Introductionmentioning

confidence: 99%

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Application of Electron Projection Lithography to Via Formation in Two-Layer Metallization

Koba¹,

Sakaue²,

Koike³

et al. 2006

jjap

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In this paper we showed electron projection lithography (EPL) applicability to via formation in a back-end-of-line (BEOL) process for 45-nm technology node through fabricating a two-layer metallization device. We developed a single-layer via-resist process for 45-nm technology node. In order to prevent resist profile deteriorations, we optimized process conditions of a bottom anti-reflective coating (BARC) and an electrical conductive film (ECF). As a result, fine 60-nm (1:1) via-patterns were obtained after low-k dry-etching and 67-nm via-holes filling with Cu could be confirmed by using cross-sectional transmission electron microscope (TEM). These results suggested the single-layer via-resist process we developed could be applied for 45-nm technology node. In addition, for 32-nm technology node, we developed a tri-layer via-resist process that had a high resolution compared with a single-layer resist process. There, we could obtain extremely fine 40-nm (1:1) top-layer via-resist patterns. We believe that EPL has high applicability to via formation in BEOL process for not only 45-nm but also 32-nm technology node.

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“…6) An acid in the resist might be neutralized by the amine. We could then improve the resist profile by applying BARC between the resist and the low-k film 3) [Fig. 1(c)].…”

Section: Results and Discussion 221 Improvement By Barcmentioning

confidence: 99%

Section: Overlay Accuracy Improvement By Ecfmentioning

confidence: 99%

Section: Overlay Accuracy Improvement By Ecfmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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