Epitaxy of Zn1 − Mg Se Te1 − on (100)InAs

Stabilizing the Optimal Carrier Concentration for High Thermoelectric Efficiency

“…The convergence of valence bands (higher N v ) at lower temperatures increases n * at low temperatures, while the increased bandgap (due to the much wider bandgap of MgTe [ 11 ] ) leads to a lower n * at high temperatures. The net effect enables an effi cient compromise for n * ( T ) at both low and high temperature regions, to be closer to the n * required for medium temperatures.…”

“…For example alloys with PbSe, [ 12 ] MgTe, [24][25][26] and (Zn, Cd, Hg)Te [ 27 ] increase the energy separation of both L and Σ bands with respect to the C band. Alloying with MgTe has an exceptional infl uence on the band structure ( Figure 2 a) up to the solubility limit ( x ≈ 0.06 in Mg x Pb 1-x Te for T > 525 K), [ 25 , 27 ] as can be qualitatively explained by the much wider bandgap ( ≈ 3.5 eV) of MgTe [ 11 ] than PbTe ( ≈ 0.3 eV at 300 K).…”

II–VI/III–V structures with a heterovalent interface in the active region: New opportunities in band engineering

“…In contrast, the InAs/CdSe (∆a/a = 0.31%) and InAs/ZnTe (∆a/a = 0.5%) heteropairs were much less studied in the past (CdSe just on GaAs [4,5], ZnTe on InAs [6,7]), although InAs is characterized by superior transport properties of 2D electron gas (2DEG) as compared to GaAs, which allows one to expect the much larger spin coherence length in InAs quantum wells (QWs). On the other hand, there exists a large variety of III-V (AlGaInAsSb) and II-VI (CdMgMnSe, ZnMnTe) compounds, including DMS ones, lattice-matched to InAs and suitable for fabrication of pseudomorphic hybrid heterostructures with any desirable band alignment (type I or type II).…”

First-principles investigation of wide-gap quaternary alloys Zn1−xMgxSyTe1−y

“…However, our calculations show that the wurtzite structure of MgTe is only 35.4 meV more stable than zinc-blende structure. Moreover, based on experimental reports, it is possible to grow MgTe in the zincblende structure [2,13]. Therefore, to prevent more complexity we adopted the zinc-blende structure for all the binary compounds, including MgTe.…”