Epitaxially-grown metamorphic GaAsP/Si dual-junction solar cells

Grassman, Tyler J.; Carlin, John A.; Ratcliff, Chris; Chmielewski, Daniel J.; Ringel, S. A.

doi:10.1109/pvsc.2013.6744117

Cited by 33 publications

(21 citation statements)

References 15 publications

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“…Shallower BSFs will only work relatively well if a peak concentration well within the 10 19 cm -3 range could be eventually reached. As it is well established, the rear passivation has an even greater impact on Voc-Without any rear passivation, the high saturation current density caused by the full-area rear contact decreases Vbc down to 524 mV; the value is in good agreement with the first published experimental data [12]. The LT-BSF approach provides little improvement on this baseline result.…”

Section: A Low-temperature Bsfsupporting

confidence: 81%

Assessment of Rear-Surface Processing Strategies for III–V on Si Multijunction Solar Cells Based on Numerical Simulations

Martín-Martín

García‐Tabarés

Rey‐Stolle

2016

IEEE Trans. Electron Devices

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The manufacturing of high-efficiency III-V on Si multijunction solar cells needs the development of hybrid, i.e., adapted to both families of materials, solar cell processing techniques, able to extract the full photovoltaic potential of both the subcells. This fact especially impacts the processing of the silicon rear surface of the tandem, which cannot receive treatments commonly used in the single-junction Si solar cell industry [Al-back surface field (BSF), thermal SÍO2, and so on], since these would result in an excessive thermal load that would deteriorate the III-V upper layers (top cell, tunnel junction, and buffer layer). However, the Si bottom cell requires an advanced design with good rear passivation, a good ohmic contact, and good carrier selectivity, so that its contribution to the efficiency of the tandem is maximized. Accordingly, in this paper, several lowtemperature compatible rear-surface passivation techniques for the Si bottom subcell in a monolithic Ill-V/Si tandem solar cell are explored. In particular, aluminum BSFs, passivated emitter and rear cell (PERC)-like architecture, passivated emitter and rear locally diffused (PERL)-like architecture formed with low thermal loads, and heterojunction with intrinsic thin layer (HIT)like processes are assessed using numerical simulations, and a comparison of the Si bottom cell performance for the mentioned alternatives in a GaAsP/Si dual-junction solar cell is presented.

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Section: A Low-temperature Bsfsupporting

confidence: 81%

Assessment of Rear-Surface Processing Strategies for III–V on Si Multijunction Solar Cells Based on Numerical Simulations

Martín-Martín

García‐Tabarés

Rey‐Stolle

2016

IEEE Trans. Electron Devices

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“…Recently, two‐terminal and four‐terminal III‐V/Si tandem solar cells have reached efficiencies above 33% under one‐sun illumination, through careful bandgap engineering and incremental material choice improvement . Particularly, AlGaAs and InGaP alloys have received much attention, as they show great promises for the realization of single junction solar cells with direct bandgaps near 1.73 eV, suitable for high efficiency Si‐based tandem dual junction devices, according to detailed balance modeling …”

Section: Introductionmentioning

confidence: 99%

“…1,2 Particularly, AlGaAs and InGaP alloys have received much attention, as they show great promises for the realization of single junction solar cells with direct bandgaps near 1.73 eV, suitable for high efficiency Si-based tandem dual junction devices, according to detailed balance modeling. [3][4][5][6] There are two main approaches for multi-junction III-V on Si solar cells. In a two-terminal approach, III-V cells can be directly grown on Si cells.…”

mentioning

confidence: 99%

1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency

Slimane

Michaud

Mauguin

et al. 2020

Progress in Photovoltaics

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We report on AlGaAs‐based heterojunction solar cells grown by solid source molecular beam epitaxy (MBE). We investigate InGaP and AlGaAs material quality and we demonstrate significant efficiency improvements by combining the best of each alloy: a thick p‐AlGaAs base with tunable bandgap, and a thin 50 nm n‐InGaP emitter separated by a thin intrinsic AlGaAs layer. We report a certified solar cell conversion efficiency of 18.7% with a 2‐μm‐thick AlGaAs layer and a bandgap of 1.73 eV, suitable for high efficiency Si‐based tandem devices.

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“…GaAs x P 1‐x or Si 1‐x Ge x metamorphic graded buffers can be used to gradually change the material composition and the lattice constant in order to reduce the formation of dislocations. However, the high TDD values still limit the performance, being 20.1% the current certified efficiency record at one sun for an epitaxially grown III‐V on Si solar cell, which was reported by OSU for a GaAsP/Si solar cell using a GaAs x P 1‐x buffer …”

Section: Introductionmentioning

confidence: 99%

Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

Veinberg‐Vidal

Vauche

Medjoubi

et al. 2019

Progress in Photovoltaics

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Monolithic two-terminal III-V on Si dual-junction solar cells, designed for low concentration applications, were fabricated by means of surface-activated direct wafer bonding. The III-V top cell is a heterojunction formed by an n-Ga 0.5 In 0.5 P emitter and a p-Al 0.2 Ga 0.8 As base. An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which to our knowledge is the best dual-junction twoterminal III-V on Si tandem cell efficiency reported to date under verified reference conditions. The I-V characterization of these 1-cm 2 tandem cells under concentration required the development of a new method using a single-source multiflash solar simulator and not perfectly matched component cells, also known as pseudoisotypes, formed by Si single-junction cells and optical filters. In addition, the spectrum of the pulsed solar simulator was measured using a high-speed CMOS spectrometer, allowing the calculation of the spectral mismatch correction factor. Merging these two techniques results in the hybrid corrected pseudo-isotype (HCPI) characterization method, which shows a fast and accurate performance with a simplified procedure based on a single-source solar simulator. Pseudo-isotypes are easily adaptable to new cell designs by simply using a different filter, hence allowing the characterization of new multijunction solar cell architectures.

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Epitaxially-grown metamorphic GaAsP/Si dual-junction solar cells

Cited by 33 publications

References 15 publications

Assessment of Rear-Surface Processing Strategies for III–V on Si Multijunction Solar Cells Based on Numerical Simulations

Assessment of Rear-Surface Processing Strategies for III–V on Si Multijunction Solar Cells Based on Numerical Simulations

1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency

Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

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