Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates

Tsipas, Polychronis; Tsoutsou, D.; Marquez-Velasco, Jose; Aretouli, K. E.; Xenogiannopoulou, Evangelia; Vassalou, E.; Κορδάς, Γ.

doi:10.1016/j.mee.2015.04.113

Cited by 45 publications

(26 citation statements)

References 15 publications

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“…We performed ARPES on vacuum-cleaved, centimeter-scale crystals, initially mapping Fermi levels E F ~ 1.0 to 1.2 eV above valence band maxima (VBM) at the central Γ point (see fig. S1), matching similar reports for molecular beam epitaxy–grown, undoped 3L-ZrSe 2 and six-layer (6L)–HfSe 2 ( 32 , 33 ). In situ electron doping via sodium evaporation raised E F by ~100 meV, revealing features that correspond to conduction band minima (CBM) at the six shared M points of the reciprocal cell in both materials ( Fig.…”

Section: Resultssupporting

confidence: 86%

HfSe ₂ and ZrSe ₂ : Two-dimensional semiconductors with native high-κ oxides

et al. 2017

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Section: Resultssupporting

confidence: 86%

HfSe ₂ and ZrSe ₂ : Two-dimensional semiconductors with native high-κ oxides

et al. 2017

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“…However, the poor stability of tellurides in 2H and 1T phases argues against this choice. Comparing with experiment, the calculated VBO for bulk HfS 2 :WSe 2 heterojunctions (1.9 eV) is close to that measured by photoemission by Tsipas [38] (1.88 eV). Thus, the values for the bulk semiconductors are likely to be correct.…”

supporting

confidence: 80%

Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

Guo

Robertson

2016

Applied Physics Letters

165

135

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We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties.

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“…There are few studies on thin-layers of ZrX2 and they are obtained by chemical 59 exfoliation (nanosheets and nanodiscs) [18,19], grown by chemical vapor deposition (nanobelts and 60 flakes) [20][21][22] or by epitaxy [23].…”

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confidence: 99%

Raman Spectra of ZrS2 and ZrSe2 from Bulk to Atomically Thin Layers

et al. 2016

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Abstract:In the race towards two-dimensional electronic and optoelectronic devices, semiconducting transition metal dichalcogenides (TMDCs) from group VIB have been intensively studied in recent years due to the indirect to direct band-gap transition from bulk to the monolayer. However, new materials still need to be explored. For example, semiconducting TMDCs from group IVB have been predicted to have larger mobilities than their counterparts from group VIB in the monolayer limit. In this work we report the mechanical exfoliation of ZrX 2 (X = S, Se) from bulk down to the monolayer and we study the dimensionality dependence of the Raman spectra in ambient conditions. We observe Raman signal from bulk to few layers and no shift in the peak positions is found when decreasing the dimensionality. While a Raman signal can be observed from bulk to a bilayer for ZrS 2 , we could only detect signal down to five layers for flakes of ZrSe 2 . These results show the possibility of obtaining atomically thin layers of ZrX 2 by mechanical exfoliation and represent one of the first steps towards the investigation of the properties of these materials, still unexplored in the two-dimensional limit.

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Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates

Cited by 45 publications

References 15 publications

HfSe ₂ and ZrSe ₂ : Two-dimensional semiconductors with native high-κ oxides

HfSe ₂ and ZrSe ₂ : Two-dimensional semiconductors with native high-κ oxides

Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

Raman Spectra of ZrS2 and ZrSe2 from Bulk to Atomically Thin Layers

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Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates

Cited by 45 publications

References 15 publications

HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

Raman Spectra of ZrS2 and ZrSe2 from Bulk to Atomically Thin Layers

Contact Info

Product

Resources

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HfSe ₂ and ZrSe ₂ : Two-dimensional semiconductors with native high-κ oxides

HfSe ₂ and ZrSe ₂ : Two-dimensional semiconductors with native high-κ oxides