Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas

Khusyainov, D. I.; Buryakov, A. M.; Bilyk, Vladislav; Мишина, Е. Д.; Пономарев, Д. С.; Хабибуллин, Р. А.; Yachmenev, A. E.

doi:10.1134/s1063785017110220

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…Despite considering log-spiral PCAs based on the LT-GaAs to showcase the potential of the proposed approach, it could also be applied to other types of photoconductors (i.e. exploiting different materials and laser pumps [16,[20][21][22][24][25][26][27][28][29]) and other antenna topology [55], as well as for modelling of the continuous-wave THz generation in the PCA [41]. The proposed approach for shaping the THz pulse spectrum can be used for a broad range of THz technology applications in condensed matter physics [3], material science [4], gas sensing [5], chemistry [6], biology and medicine [7].…”

Section: Discussionmentioning

confidence: 99%

“…• THz pulse generation and detection in accelerating charge carriers of semiconductors, such as low-temperature grown semiconductors (LT-GaAs or LT-InGaAs) and related heterostructures [20][21][22], radiation-damaged semiconductors (GaAs or Si) [23], [24], in ZnSe [25], GaAsBi [26], and others, using the photoconductivity [16], the photo-Dember effect [27] or the built-in electric field [28].…”

Section: Introductionmentioning

confidence: 99%

“…• Thz pulse generation and detection in accelerating charge carriers of semiconductors, such as low-temperature grown semiconductors (LT-GaAs or LT-InGaAs) and related heterostructures [20][21][22][23], radiation-damaged semiconductors (GaAs or Si) [24,25], in ZnSe [26], GaAsBi [27] and others, using the photoconductivity [16], the photo-dember effect [28] or the built-in electric field [29]. • THz pulse generation and detection in nonlinear media, such as semiconductors (ZnTe, GaAs, GaP, InP, GaSe) [30], inorganic electrooptical crystals (LiNbO 3 , LiTaO 3 ) [31,32], organic crystals [33], and VO 2 -films undergoing metal-insulator phase transition [34], using optical rectification [35] and electrooptical effects [36].…”

Section: Introductionmentioning

confidence: 99%

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Shaping the spectrum of terahertz photoconductive antenna by frequency-dependent impedance modulation

Lavrukhin

Yachmenev

Pavlov

et al. 2019

Semicond. Sci. Technol.

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In this paper, we report on an approach for shaping the spectra of THz pulse generation in photoconductive antennas (PCAs) by frequency-dependent impedance modulation. We introduce a theoretical model describing the THz pulse generation in PCAs and accounting for impedances of the photoconductor and of the antenna. In order to showcase an impact of frequency-dependent impedance modulation on the spectra of THz pulse generation, we applied this model to simulating broadband PCAs with log-spiral topology. Finally, we fabricated two different log-spiral PCAs and characterized them experimentally using the THz pulsed spectroscopy. The observed results demonstrate excellent agreement between the theoretical model and experiment, justifying a potential of shaping the spectra of THz pulse generation in PCA by modulation of frequency-dependent impedances. This approach makes possible optimizing the PCA performance and thus accommodating the needs of THz pulsed spectroscopy and imaging in fundamental and applied branches of THz science and technologies. arXiv:1808.06592v1 [physics.app-ph]

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Shaping the spectrum of terahertz photoconductive antenna by frequency-dependent impedance modulation

Lavrukhin

Yachmenev

Pavlov

et al. 2019

Semicond. Sci. Technol.

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“…Recently, we demonstrated that epitaxial stresses in the InGaAs photoconductor allow for reduction of photocarrier relaxation times up to 20% in comparison to non-strained InGaAs due to a formation of recombination centers in the band gap of a photoconductor [36,37]. Lately we fabricated a 30-period SL slightly analogous to that in Ref.…”

Section: Introductionmentioning

confidence: 99%

Strain-induced InGaAs/InAlAs superlattices for terahertz radiation

Ponomarev,

Yachmenev,

Pushkarev

et al. 2018

Preprint

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We study the influence of residual strain in InGaAs/InAlAs superlattice (SL) on the ultrafast photocarrier dynamics under femtosecond laser excitation. We propose and fabricate a novel-designed strained InGaAs/InAlAs SL which allows us to obtain an ultrashort photocarrier relaxation time of τ ∼ 1.5 ps without Be-doping of the InGaAs photoconductor. We assume two dominant mechanisms to be responsible for a sharp reduction of τ : photocarriers trapping by defect levels in InAlAs barriers and increased photocarriers scattering at InGaAs/InAlAs interface roughness due to residual strain in the SL. The THz time-domain spectroscopic measurements reveal an increase in both emitted THz waveform and spectrum amplitudes with an increase of residual strain in SL. The results might be of considerable interest for accommodating the needs of THz pulsed spectroscopy and imaging in fundamental and applied branches of THz science and technology.

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